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LX5560LL-13115-TR

P1-P3P4-P6P7-P8
LX5560
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
Copyright © 2006
Rev. 1.0, 2006-12-20
WWW.Microsemi .COM
InGaAs – E-Mode pHEMT Low Noise Amplifier
TM
®
DESCRIPTION
The LX5560 is a low noise amplifier
(LNA) for WLAN applications in the
4.9-6.0 GHz frequency range. This
LNA is manufactured with an InGaAs
Enhancement mode pseudomorphic
HEMT (E-pHEMT) process.
It operates with a single positive
voltage supply of 3.3V, with noise
figure(NF) of 1.7dB while maintaining
input third order intercept point(IIP3)
of up to +6dBm.
The LNA is implemented with bias
circuit and input matching circuit on
chip, resulting in simple external
circuit. In addition, the on-chip bias
circuit provides stable performance of
gain, NF and current for voltage
variation compared to a general
resistor-network bias circuit.
The LX5560 is available in a 12-pin
2mmx2mm micro-lead package(MLPQ-
12L).
BLOCK DIAGRAM
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
0.5µm InGaAs E-mode pHEMT
4.9 - 6GHz Operation
Single 3.3V Supply
Gain ~ 12dB
Noise Figure ~ 1.7dB
Input IP3 ~ +6dBm
Input P1dB ~ +2dBm
On-Chip Bias Circuit
On-Chip Input Match
Simple Output Match
2x2mm² MLPQ 12 Pin
Low Profile 0.5mm
APPLICATIONS
Wireless LAN 802.11a
WiMax
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
LL
Plastic MLPQ
12 pin
RoHS Compliant / Pb-free
LX5560LL
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5560LL-TR)
Input
Match
Bias
Circuit
RF
Output
RF
Input
Vdd
Input
Match
Bias
Circuit
RF
Output
RF
Input
Vdd
L
L
X
X
5
5
5
5
6
6
0
0
•
560
645
LX5560
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
Copyright © 2006
Rev. 1.0, 2006-12-20
WWW.Microsemi .COM
InGaAs – E-Mode pHEMT Low Noise Amplifier
TM
®
ABSOLUTE MAXIMUM RATINGS
DC Supply Voltage, RF Off............................................................................................4 V
Drain Current............................................................................................................ 40 mA
Total Power Dissipation............................................................................................0.15 W
RF Input Power..................................................................................................... +10 dBm
Operation Ambient Temperature Range ..................................................... -40°C to +85°C
Storage Temperature Range.........................................................................-65°C to 150°C
Package Peak Temp. for Solder Reflow (40 seconds maximum exposure) ...260°C (+0 -5)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal
.
PACKAGE PIN OUT
LL PACKAGE
(Bottom View)
RoHS / Pb-free NiPdAu Lead Finish
FUNCTIONAL PIN DESCRIPTION
Name Pin # Description
RF IN 2
RF Input for the low noise amplifier. This pin is DC-shorted to GND but AC-coupled to the
transistor gate.
RF OUT 8
RF Output for the low noise amplifier. This pin is AC-coupled and does not require a DC-blocking
capacitor.
VDD 12 Supply Voltage.
GND
Center
Metal
The center metal base of the MLP package provides both DC and RF ground.
N/C
1,3,4,5,6,7,
9,10,11
Not Used. They may be treated either as open pins or connected to the ground.
N/C
RF IN
N/CN/C
RF OUT
N/C
VDD
N/C
2
1
3
456
7
8
9
10 11 12
GND
N/C
N/C
N/C
N/C
P
P
A
A
C
C
K
K
A
A
G
G
E
E
D
D
A
A
T
T
A
A
LX5560
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
Copyright © 2006
Rev. 1.0, 2006-12-20
WWW.Microsemi .COM
InGaAs – E-Mode pHEMT Low Noise Amplifier
TM
®
ELECTRICAL CHARACTERISTICS
Nominal test conditions: V
DD
= 3.3V, I
DD
= 9.5mA, T
A
= 25°C (Room Temperature)
LX5560
Parameter Symbol Test Conditions
Min Typ Max
Units
Application Frequency Range f 4.9 6 GHz
Small-Signal Gain S21 12 dB
Noise Figure NF Room Temperature 1.7 2.1 dB
Input 3
rd
Order Intercept Point IIP3 Freq. 1 = 5.25 GHz, Freq. 2 = 5.27 GHz 6 dBm
Input P1dB IP1dB Freq. = 5.5 GHz 2 dBm
Input Return Loss S11 9 dB
Output Return Loss S22
10 dB
Supply Voltage V
DD
3.3 V
Supply Current I
DD
9.5 mA
E
E
L
L
E
E
C
C
T
T
R
R
I
I
C
C
A
A
L
L
S
S
P1-P3P4-P6P7-P8

LX5560LL-13115-TR

Mfr. #:
Buy LX5560LL-13115-TR
Manufacturer:
Microchip / Microsemi
Description:
RF Amplifier LX5560LL-13115-TR
Lifecycle:
New from this manufacturer.
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