NTMFD4C88N
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6
TYPICAL CHARACTERISTICS − Q1
Figure 3. On−Region Characteristics Figure 4. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
543210
0
10
30
60
70
100
4.03.53.02.01.51.00.50
0
10
20
30
40
60
70
100
Figure 5. On−Resistance vs. Gate−to−Source
Voltage
Figure 6. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
109876543
0.002
0.004
0.006
0.010
0.012
0.014
0.016
0.026
70605040302010
0.003
0.004
0.005
0.007
0.008
0.009
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
2.8 V
3.0 V
3.2 V
3.4 V
3.6 V
V
GS
= 2.6 V
3.8 V
4.5 V to 10 V
T
J
= 25°C
20
40
50
80
90
4.0 V
2.5 4.5
50
V
DS
= 5 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
0.008
0.018
I
D
= 20 A
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
T
J
= 25°C
V
GS
= 10 V
V
GS
= 4.5 V
0.006
5.0 5.5
80
90
0.020
0.022
0.024
Figure 7. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
1251007550250−25−50
0.7
0.8
0.9
1.1
1.3
1.4
1.5
1.7
Figure 8. Capacitance Variation
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
302520151050
0
200
600
800
1200
1400
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
C, CAPACITANCE (pF)
150
1.0
1.2
1.6
V
GS
= 10 V
I
D
= 20 A
V
GS
= 0 V
T
J
= 25°C
C
iss
C
oss
C
rss
400
1000
1600
