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VB30120C-E3/4W

P1-P3P4-P6
V30120C-E3, VF30120C-E3, VB30120C-E3, VI30120C-E3
www.vishay.com
Vishay General Semiconductor
Revision: 12-Dec-16
1
Document Number: 89041
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.50 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB
and TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 15 A
V
RRM
120 V
I
FSM
150 A
V
F
at I
F
= 15 A 0.68 V
T
J
max. 150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations Common cathode
TO-220AB
V30120C VF30120C
VI30120CVB30120C
1
2
3
1
K
2
3
TO-263AB
1
2
K
TO-262AA
PIN 1
PIN 2
PIN 3
K
PIN 1
PIN 2
K
HEATSINK
PIN 1
PIN 2
PIN 3
PIN 1
PIN 2
CASE
PIN 3
TMBS
®
ITO-220AB
1
2
3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V30120C VF30120C VB30120C VI30120C UNIT
Max. repetitive peak reverse voltage V
RRM
120 V
Max. average forward rectified current
(fig. 1)
per device
I
F(AV)
30 A
per diode 15
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
150 A
Non-repetitive avalanche energy
at T
J
= 25 °C, L = 60 mH per diode
E
AS
130 mJ
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz,
T
J
= 38 °C ± 2 °C per diode
I
RRM
0.5 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
AC
1500 V
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
V30120C-E3, VF30120C-E3, VB30120C-E3, VI30120C-E3
www.vishay.com
Vishay General Semiconductor
Revision: 12-Dec-16
2
Document Number: 89041
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage I
R
= 1.0 mA T
A
= 25 °C V
BR
120 (min.) - V
Instantaneous forward voltage per diode
(1)
I
F
= 5 A
T
A
= 25 °C
V
F
0.56 -
V
I
F
= 7.5 A 0.71 -
I
F
= 15 A 0.86 0.97
I
F
= 5 A
T
A
= 125 °C
0.50 -
I
F
= 7.5 A 0.60 -
I
F
= 15 A 0.68 0.76
Reverse current per diode
(2)
V
R
= 90 V
T
A
= 25 °C
I
R
11 - μA
T
A
= 125 °C 8 - mA
V
R
= 120 V
T
A
= 25 °C - 800 μA
T
A
= 125 °C 17 50 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V30120C VF30120C VB30120C VI30120C UNIT
Typical thermal resistance per diode R
JC
2.2 4.5 2.2 2.2 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V30120C-E3/4W 1.89 4W 50/tube Tube
ITO-220AB VF30120C-E3/4W 1.75 4W 50/tube Tube
TO-263AB VB30120C-E3/4W 1.38 4W 50/tube Tube
TO-263AB VB30120C-E3/8W 1.38 8W 800/reel Tape and reel
TO-262AA VI30120C-E3/4W 1.46 4W 50/tube Tube
Case Temperature (°C)
Average Forward Rectified Current (A)
40
35
25
15
5
0
0 25 50 75 100 125 150 175
VF30120C
V(B,I)30120C
Resistive or Inductive Load
Mounted on Specific Heatsink
30
20
10
0
2
6
10
14
18
0246 14 18
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
12
4
8
12
16
10 168
D = t
p
/T t
p
T
V30120C-E3, VF30120C-E3, VB30120C-E3, VI30120C-E3
www.vishay.com
Vishay General Semiconductor
Revision: 12-Dec-16
3
Document Number: 89041
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Fig. 7 - Typical Transient Thermal Impedance Per Diode
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0 0.2 0.4 0.8 1.2 1.6
100
10
1
0.1
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
0.6 1.0 1.4
T
A
= 150 °C
10 20 30 40
50
60 70 80 90 100
1
0.1
0.01
0.001
100
10
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
10
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
100
10
1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
V(B,I)30120C
Junction to Case
10
1
0.1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
VF30120C
Junction to Case
P1-P3P4-P6

VB30120C-E3/4W

Mfr. #:
Buy VB30120C-E3/4W
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 30 Amp 120 Volt Dual TrenchMOS
Lifecycle:
New from this manufacturer.
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