NL27WZ32USG

© Semiconductor Components Industries, LLC, 2012
January, 2018 − Rev. 10
1 Publication Order Number:
NL27WZ32/D
NL27WZ32
Dual 2-Input OR Gate
The NL27WZ32 is a high performance dual 2−input OR Gate
operating from a 1.65 V to 5.5 V supply.
Features
Extremely High Speed: t
PD
2.5 ns (typical) at V
CC
= 5 V
Designed for 1.65 V to 5.5 V V
CC
Operation
Over Voltage Tolerant Inputs
LVTTL Compatible − Interface Capability With 5 V TTL Logic with
V
CC
= 3 V
LVCMOS Compatible
24 mA Balanced Output Sink and Source Capability
Near Zero Static Supply Current Substantially Reduces System
Power Requirements
Replacement for NC7WZ32
Chip Complexity: FET = 120
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
A2
Y2
Figure 1. Pinout
Figure 2. Logic Symbol
w1
Y1
A1
B2
B1
V
CC
A1
B1
GND
1
2
3
8
7
6
45
Y2
Y1
B2
A2
IEEE/IEC
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAM
US8
US SUFFIX
CASE 493
8
1
www.onsemi.com
1
8
L4 M G
G
LR = Device Code
M = Date Code*
G = Pb−Free Package
*Date Code orientation may vary depending upo
n
manufacturing location.
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Pin
1
2
3
4
5
6
7
8
Function
A1
B1
Y2
GND
A2
B2
Y1
V
CC
Input
FUNCTION TABLE
B
L
H
L
H
Output
Y = A + B
Y
L
H
H
H
A
L
L
H
H
NL27WZ32
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2
MAXIMUM RATINGS
Symbol Parameter Value Units
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
I
DC Input Voltage −0.5 to +7.0 V
V
O
DC Output Voltage −0.5 to +7.0 V
I
IK
DC Input Diode Current
V
I
< GND
−50 mA
I
OK
DC Output Diode Current
V
O
< GND
−50 mA
I
O
DC Output Sink Current ±50 mA
I
CC
DC Supply Current per Supply Pin ±100 mA
I
GND
DC Ground Current per Ground Pin ±100 mA
T
STG
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature under Bias +150 °C
q
JA
Thermal Resistance (Note 1) 250 °C/W
P
D
Power Dissipation in Still Air at 85°C 250 mW
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
N/A
V
I
Latch−Up
Latch−Up Performance
Above V
CC
and Below GND at 85°C (Note 5) ±500
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Units
V
CC
Supply Voltage
Operating
Data Retention Only
1.65
1.5
5.5
5.5
V
V
I
Input Voltage (Note 6) 0 5.5 V
V
O
Output Voltage (HIGH or LOW State) 0 5.5 V
T
A
Operating Free−Air Temperature −40 +125 °C
Dt/DV
Input Transition Rise or Fall Rate
V
CC
= 1.8 V ±0.15 V
V
CC
= 2.5 V ±0.2 V
V
CC
= 3.0 V ±0.3 V
V
CC
= 5.0 V ±0.5 V
0
0
0
0
20
20
10
5
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
6. Unused inputs may not be left open. All inputs must be tied to a high−logic voltage level or a low−logic input voltage level.
NL27WZ32
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3
DC ELECTRICAL CHARACTERISTICS
Symbo
l
Parameter Condition
V
CC
(V)
T
A
= +255C T
A
= −405C to +1255C
Units
Min Typ Max Min Max
V
IH
HIGH Level Input Voltage 1.65 to 1.95 0.75 V
CC
0.7 V
CC
0.75 V
CC
0.7 V
CC
V
V
IL
LOW Level Input Voltage 1.65 to 1.95
2.3 to 5.5
0.3 V
CC
0.3 V
CC
V
V
OH
HIGH Level Output Voltage
V
IN
= V
IH
I
OH
= −100 mA
1.65
2.3
3.0
4.5
1.55
2.2
2.9
4.4
1.65
2.3
3.0
4.5
1.55
2.2
2.9
4.4
V
I
OH
= −4 mA
I
OH
= −8 mA
I
OH
= −16 mA
I
OH
= −24 mA
I
OH
= −32 mA
1.65
2.3
3.0
3.0
4.5
1.29
1.9
2.4
2.3
3.8
1.52
2.15
2.8
2.68
4.2
1.20
1.9
2.4
2.3
3.8
V
OL
Low−Level Output Voltage
V
IN
= V
IL
I
OL
= 100 mA
1.65
2.3
3.0
4.5
0
0
0
0
0.1
0.1
0.1
0.1
V
I
OH
= 4 mA
I
OH
= 8 mA
I
OH
= 16 mA
I
OH
= 24 mA
I
OH
= 32 mA
1.65
2.3
3.0
3.0
4.5
0.08
0.1
0.15
0.22
0.22
0.24
0.3
0.4
0.55
0.55
I
IN
Input Leakage Current V
IN
= 5.5 V or
GND
0 to 5.5 ±0.1 ±1.0
mA
I
OFF
Power Off Leakage
Current
V
IN
= 5.5 V or
V
OUT
= 5.5 V
0 1.0 10
I
CC
Quiescent Supply Current V
IN
= 5.5 V or
GND
5.5 1.0 10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS t
R
= t
F
= 3.0 ns
V
CC
T
A
= 255C *405C v T
A
v 1255C
Symbol Parameter Condition (V) Min Typ Max Min Max Units
t
PLH
t
PHL
Propagation Delay
(Figure 3 and 4)
R
L
= 1 MW, C
L
= 15 pF
1.8 ± 0.15
2.5 ± 0.2
2.0
1.0
8.0
3.5
9.5
5.8
2.0
1.0
10.5
6.2
ns
R
L
= 1 MW, C
L
= 15 pF
R
L
= 500 W, C
L
= 50 pF
3.3 ± 0.3 0.8
1.2
2.6
3.2
3.9
4.8
0.8
1.2
4.3
5.2
R
L
= 1 MW, C
L
= 15 pF
R
L
= 500 W, C
L
= 50 pF
5.0 ± 0.5 0.5
0.8
1.9
2.5
3.1
3.7
0.5
0.8
3.3
4.0
CAPACITIVE CHARACTERISTICS
Symbol Parameter Condition Typical Units
C
IN
Input Capacitance V
CC
= 5.5 V, V
I
= 0 V or V
CC
2.5 pF
C
PD
Power Dissipation Capacitance
(Note 7)
10 MHz, V
CC
= 3.3 V, V
I
= 0 V or V
CC
10 MHz, V
CC
= 5.5 V, V
I
= 0 V or V
CC
9
11
pF
7. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.

NL27WZ32USG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Logic Gates 1.65-5.5V Dual 2-Input OR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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