OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BYV28-600-TAP

P1-P3P4-P4
BYV28-600
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 04-Sep-12
1
Document Number: 86043
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultra-Fast Avalanche Sinterglass Diode
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
• Glass passivated
• Hermetically sealed axial-leaded glass envelope
• Low reverse current
• Ultra fast soft recovery switching
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
•TV
•SMPS
• Power feedback systems
949588
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYV28-600 BYV28-600-TR 2500 per 10" tape and reel 12 500
BYV28-600 BYV28-600-TAP 2500 per ammopack 12 500
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYV28-600 V
R
= 600 V; I
F(AV)
= 3.5 A SOD-64
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics BYV28-600 V
R
= V
RRM
600 V
Peak forward surge current t
p
= 10 ms, half sine wave I
FSM
90 A
Average forward current l = 10 mm I
F(AV)
3.5 A
Non repetitive reverse avalanche energy Inductive load, l
(BR)R
= 1 A E
R
20 mJ
Junction and storage temperature range T
j
= T
stg
- 55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient
Lead length l = 10 mm, T
L
= constant R
thJA
25 K/W
On PC board with spacing 25 mm R
thJA
70 K/W
BYV28-600
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 04-Sep-12
2
Document Number: 86043
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 C, unless otherwise specified)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 2 - Max. Reverse Current vs. Junction Temperature
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Forward Current vs. Forward Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 3.5 A V
F
- - 1.25 V
I
F
= 5 A V
F
- - 1.35 V
I
F
= 3.5, T
j
= 175 °C V
F
- - 0.95 V
I
F
= 5 A, T
j
= 175 °C V
F
- - 1.06 V
Reverse current
V
R
= V
RRM
I
R
--5μA
V
R
= V
RRM
, T
j
= 150 °C I
R
- - 150 μA
Reverse breadkdown voltage I
R
= 100 μA V
(BR)R
600 - - V
Reverse recovery time I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A t
rr
- - 50 ns
Forward recovery I
F
= 5 A V
FP
-6.2- V
Forward recovery time I
F
= 5 A t
fr
- 210 - ns
0
50
100
150
200
250
300
25 50 75 100 125 150 175
T
j
– Junction Temperature (°C)14365
V
R
=V
RRM
P – Reverse Power Dissipation (mW)
R
70 K/W
25 K/W
P
R
–Limit
at 100 %10V
R
P
R
–Limit
at 80 % V
R
R
thJA
=
1
10
100
1000
25 50 75 100 125 150 175
1
10
100
1000
25 50 75 100 125 150 175
T
j
– Junction Temperature (°C )14366
V
R
=V
RRM
I – Reverse Current (A)
R
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 20 40 60 80 100 120 140 160 180
T
amb
– Ambient Temperature (°C )
14364
I –Average Forward Current( A )
FAV
V
R
=V
RRM
half sinewave
R
thJA
70 K/W
PCB:d=25mm
R
thJA
25 K/W
l=10mm
≤
≤
I – Forward Current (A )
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
F
– Forward Voltage(V)14363
F
T
j
=25°C
T
j
= 175 °C
0.01
0.1
1
10
100
0.001
BYV28-600
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 04-Sep-12
3
Document Number: 86043
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typ. Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
0
20
40
60
80
100
120
140
160
0.1 1.0 10.0 100.0
V
R
– Reverse Voltage(V)14367
C – Diode Capacitance ( pF )
D
f=1MHz
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
4 (0.156) max.
Sintered Glass Case
SOD-64
26(1.014) min. 26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
P1-P3P4-P4

BYV28-600-TAP

Mfr. #:
Buy BYV28-600-TAP
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 3.5 Amp 600 Volt 90 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet