FDS6572A

September 2001
2001 Fairchild Semiconductor Corporation
FDS6572A Rev C (W)
FDS6572A
20V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
Applications
DC/DC converter
Features
16 A, 20 V. R
DS(ON)
= 6 m @ V
GS
= 4.5 V
R
DS(ON)
= 8 m @ V
GS
= 2.5 V
Low gate charge (57 nC)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 20 V
V
GSS
Gate-Source Voltage ±12 V
I
D
Drain Current – Continuous (Note 1a) 16 A
– Pulsed 80
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
1.2
P
D
(Note 1c)
1.0
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +175
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 25
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6572A FDS6572A 13’’ 12mm 2500 units
FDS6572A
FDS6572A Rev C (W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
20 V
BVDSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C 12 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 16 V, V
GS
= 0 V 1
µA
I
GSSF
Gate–Body Leakage, Forward V
GS
= 12 V, V
DS
= 0 V 100 nA
I
GSSR
Gate–Body Leakage, Reverse V
GS
= –12 V V
DS
= 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
0.6 0.8 1.5 V
VGS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, Referenced to 25°C
–4 mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 4.5 V, I
D
= 16 A
V
GS
= 2.5 V, I
D
= 14 A
V
GS
= 4.5 V, I
D
= 16 A,T
J
=125°C
4
5
5.7
6
8
9
m
I
D(on)
On–State Drain Current V
GS
= 4.5 V, V
DS
= 5 V 40 A
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 16 A 96 S
Dynamic Characteristics
C
iss
Input Capacitance 5914 pF
C
oss
Output Capacitance 1433 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
797 pF
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 21 34 ns
t
r
Turn–On Rise Time 25 40 ns
t
d(off)
Turn–Off Delay Time 102 163 ns
t
f
Turn–Off Fall Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
66 106 ns
Q
g
Total Gate Charge 57 80 nC
Q
gs
Gate–Source Charge 10 nC
Q
gd
Gate–Drain Charge
V
DS
= 10 V, I
D
= 16 A,
V
GS
= 4.5 V
16 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current 2.1 A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2.1 A (Note 2) 0.6 1.2 V
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 50°C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6572A
FDS6572A Rev C (W)
Typical Characteristics
0
20
40
60
80
100
0 0.5 1 1.5 2 2.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5V
2.5V
2.0V
3.0V
1.8V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 20 40 60 80 100
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 1.8V
4.5V
3.0V
2.0V
2.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 16A
V
GS
= 4.5V
0.002
0.004
0.006
0.008
0.01
0.012
1 2 3 4 5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 8A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
15
30
45
60
75
90
0.5 1 1.5 2 2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C 25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6572A

FDS6572A

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 20V 16A 8SOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet