Characteristics STPS20120C
2/14 DocID11212 Rev 4
1 Characteristics
When the two diodes 1 and 2 are used simultaneously:
T
j
(diode1) = P(diode1) x R
th(j-c)
(per diode) + P(diode2) x R
th(c)
To evaluate the conduction losses, use the following equation:
P = 0.62 x I
F(AV)
+ 0.012 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values per diode at T
amb
= 25 °C unless otherwise stated)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 120 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward current,
= 0.5, square wave
T
c
= 150 °C per diode 10
A
T
c
= 145 °C per device 20
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 150 A
P
ARM
Repetitive peak avalanche power t
p
= 10 µs, T
j
= 125 °C 330 W
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature
(1)
175 °C
1. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal parameters
Symbol Parameter Max. value Unit
R
th(j-c)
Junction to case
per diode 3
°C/Wtotal 1.8
R
th(c)
Coupling 0.6
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-10µA
T
j
= 125 °C - 1.5 5 mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 2.5 A
-0.70
V
T
j
= 125 °C - 0.54 0.58
T
j
= 25 °C
I
F
= 10 A
-0.92
T
j
= 125 °C - 0.70 0.74
T
j
= 25 °C
I
F
= 20 A
-1.02
T
j
= 125 °C - 0.81 0.86
1. Pulse test: t
p
= 5 ms, < 2%
2. Pulse test: t
p
= 380 µs, < 2%
