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SE2470-001

P1-P3P4-P4
AlGaAs Infrared Emitting Diode
SE2470
DESCRIPTION
FEATURES
Miniature, hermetically sealed, pill style, metal
can package
•
18¡ (nominal) beam angle
•
Wide operating temperature range
(-55¡C to +125¡C)
•
Higher power output than GaAs at equivalent
drive currents
•
Ideal for direct mounting to printed circuit boards
•
880 nm wavelength
•
Mechanically and spectrally matched to SD2420
photodiode, SD2440 phototransistor and
SD2410 photodarlington
•
The SE2470 is a high intensity aluminum gallium
arsenide infrared emitting diode mounted in a
hermetically sealed, glass lensed, metal can package.
This package directly mounts in double sided PC
boards. These devices typically exhibit 70% greater
power intensity than gallium arsenide devices at the
same forward current.
DIM_002.ds4
INFRA--1.TIF
OUTLINE DIMENSIONS
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
20
AlGaAs Infrared Emitting Diode
SE2470
ELECTRICAL CHARACTERISTICS
UNITS
TEST CONDITIONS
MIN
PARAMETER
SYMBOL
TYP
MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
75 mA
Power Dissipation
125 mW [À]
Operating Temperature Range
-55¡C to 125¡C
Storage Temperature Range
-65¡C to 150¡C
Soldering Temperature (10 sec)
260¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
1.19 mW/¡C,when soldered into a double sided printed circuit
board.
SCHEMATIC
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
21
AlGaAs Infrared Emitting Diode
SE2470
Radiant Intensity vs
Angular Displacement
gra_111.ds4
Angular displacement - degrees
R
e
l
a
t
i
v
e
i
n
t
e
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s
i
t
y
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 1 Radiant Intensity vs
Forward Current
gra_016.ds4
Forward current - mA
N
o
r
m
a
l
i
z
e
d
r
a
d
i
a
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t
i
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t
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s
i
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y
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0 10.0 20.0 30.0 40.0 50.0
Fig. 2
Forward Voltage vs
Forward Current
gra_204.ds4
Forward current - mA
F
o
r
w
a
r
d
v
o
l
t
a
g
e
-
V
1.0
1.1
1.2
1.4
1.5
1.6
1.8
0 10 20 30 50 60 70 8040
1.3
1.7
Fig. 3 Forward Voltage vs
Temperature
gra_202.ds4
Temperature - °C
F
o
r
w
a
r
d
v
o
l
t
a
g
e
-
V
1.0
1.1
1.2
1.3
1.4
1.5
1.6
-50 -25 0 25 50 75 100 125
I
F
= 20 mA
Fig. 4
Spectral Bandwidth
gra_011.ds4
Wavelength - nm
R
e
l
a
t
i
v
e
i
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t
e
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s
i
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y
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
760 800 840 880 920 960 1000
Fig. 5 Coupling Characteristics
with SD2440
gra_015.ds4
Lens-to-lens separation - inches
N
o
r
m
a
l
i
z
e
d
l
i
g
h
t
c
u
r
r
e
n
t
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Fig. 6
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
22
P1-P3P4-P4

SE2470-001

Mfr. #:
Buy SE2470-001
Manufacturer:
Description:
Infrared Emitters 18deg, 50mA,Min Pill 0.7 us Rise and Fall
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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