ALM-12224-TR1G Datasheet ALM-12224-TR1G, ALM-12224-BLKG | P1-P3

ALM-12224

2.30 GHz – 2.40 GHz

50 Watt High Power SPDT Switch with LNA Module

Data Sheet

Description

Avago Technologies’ ALM-12224 is a multi-chip integrated

module that comprise of a 50 Watt CW high power SPDT

switch, 1

stage low noise ampli er and 2

stage high

gain driver ampli er through the use of Avago Tech-

nologies’ proprietary 0.25um GaAs Enhancement-mode

pHEMT process and low distortion silicon PIN diode

technologies.

The ALM-12224 is housed in a compact 8.0 x 8.0 x 1.2 mm

molded-chips-on-board (MCOB) module package with 24

pin con guration pads, o ering signi cant PCB space saving

as compare to conventional discrete design approach.

The device o ers high power protection switch (Tx mode

operation) with very low insertion loss. During Rx mode

operation, the receiver chain provides a very low NF and

high gain that makes it an ideal choice for cellular infra-

structure in TD-LTE applications.

Component Image

Package Size: 8.0 x 8.0 x 1.2 mm

Features

 Very Low Noise Figure

 High Power Switch design

 50 dB isolation between LNA1_Out and LNA2_In

 Small package size 8.0 x 8.0 x 1.2 mm

 GaAs E-pHEMT Technology

[1]

 Low Distortion Silicon PIN Diode Technology

 MSL 2a and Lead-free

Speci cations

Typical Performance at 2.40 GHz (Rx mode)

 36.8 dB Gain

 0.99 dB Noise Figure

 38.5 dBm Output IP3

Typical Performance at 2.40 GHz (Tx mode)

 0.40 dB insertion loss

Applications

 High power switch LNA module for TD-LTE base station

front-end RF application.

Block Diagram with Simpli ed Schematic

Note:

Package marking provides orientation and identi cation

“12224” = Device Part Number

“WWYY” = Work week and year of manufacture

“XXXX” = Last 4 digit of lot number

Notes:

1. Enhancement mode technology employs positive Vgs, thereby elimi-

nating the need of negative gate voltage associated with conven-

tional depletion mode devices.

AVAGO

12224

WWYY

XXXX

Vbias Vc 1 Gnd

Gnd

Rx Out

Gnd

Pin 1

Ant

Gnd

Vc 2

Vdd1

Gnd Gnd Tx

LNA2

_In

Gnd Gnd Gnd Gnd LNA1

_Out

TOP VIEW BOTTOM VIEW

Ant

Vbias

Vc2

Vc1

Vdd2

Vdd1

LNA1_Out LNA2_In

Rx Out

C10

Switch bias

circuitry

External

50 ohm

termination

Absolute Maximum Rating

[1]

= 25° C

Symbol Parameter Units Absolute Max.

c1,max

Device Control Voltage 1

(At Rx mode)

V30

c1 ,max

Device Control Current 1

(At Rx mode)

mA 57

c2,max

Device Control Voltage 2

(At Tx mode)

V30

c2,max

Device Control Current 1

(At Tx mode)

mA 57

bias

Device Bias Voltage V 5.5

dd1,2

Device Voltage, RF output to ground V 5.5

Vg Gate Voltage V 0.7

in,max

Ant CW RF Input Power (Tx mode);

5 mins testing

dBm +47.5

in,max

Ant CW RF Input Power (Rx mode)

(Vdd = 5.0 V, Idd1 = 50 mA)

dBm +20

in,max

LNA2_In CW RF Input Power

(Vdd = 5.0 V, Idd2 = 120 mA)

dBm +25

Rx P

diss

Rx mode Total Power Dissipation

[3]

LNA1

W 0.3

Rx mode Total Power Dissipation

[3]

LNA2

W 0.5

Tx P

diss

Tx mode Total Power Dissipation W 11.2

Junction Temperature °C 150

STG

Storage Temperature °C -65 to 150

amb

Ambient Temperature °C -40 to 85

Rx mode Thermal Resistance

[2]

LNA1: V

dd1

= 5.0 V, I

dd1

= 50 mA

LNA2: V

dd2

= 5.0 V, I

dd2

= 120 mA;

LNA1 

= 74.7°C/W

LNA2 

= 69.9°C/W

Tx mode Thermal Resistance

[2]

LNA1: V

dd1

= 5.0 V, I

dd1

= 50 mA

LNA2: V

dd2

= 5.0 V, I

dd2

= 120 mA;



= 10.2°C/W

Notes:

1. Operation of this device in excess of any of

these limits may cause permanent damage.

2. Thermal resistance measured using Infra-Red

Measurement Technique.

3. Power dissipation in Rx mode with both LNA1

and LNA2 turned on. Board temperature T

25° C.

LNA1: Derate at 13.5 mW/°C for T

> 113° C.

LNA2: Derate at 14.3 mW/°C for T

> 86° C.

4. Switch Turn On Condition:

Tx mode: Vbias = 5 V, Vc1 = 0 V, Vc2 = 28 V

Rx mode: Vbias = 5 V, Vc1 = 28 V, Vc2 = 0 V

Rx/Tx Switch Operating Truth Table

[1]

Mode Vbias (V) Vc1 (V) Vc2 (V)

Rx (Ant – Rx) 5 28 0

Tx (Ant – Tx) 5 0 28

Note:

1. Any state other than described above in the truth table may cause permanent damage to

the device.

Electrical Speci cations

[1]

Rx Mode

= 25° C, Vbias = 5 V, Vc1 = 28 V, Vc2 = 0 V, Vdd1= 5 V, Vdd2 = 5 V, RF performance at 2.30 GHz, measured on demo board

unless otherwise speci ed.

Symbol Parameter and Test Condition Units Min. Typ. Max.

Ibias Vbias current mA – 51.3 –

Ic1 Vc1 current mA – 0.0 –

Ic2 Vc2 current mA – -51.0 –

Idd1 Vdd1 current mA – 55.1 –

Idd2 Vdd2 current mA – 122.3 –

Total Current Total max current consumption ( Ibias + Idd1 + Idd2 ) mA – 228.7 –

NF Noise Figure dB – 0.97 –

Gain Gain dB – 37.1 –

OIP3

[2]

Output Third Order Intercept Point dBm – 38.8 –

OP1dB Output Power at 1 dB Gain Compression dBm – 23.4 –

Isolation Isolation (LNA1_output to LNA2_input) dB – 54.5 –

Rx Out RL LNA2 Output Return Loss dB – 18.7 –

Ant RL Antenna Input Return Loss dB – 18.9 –

Tx Mode

= 25° C, Vbias = 5 V, Vc1 = 0 V, Vc2 = 28 V, RF performance at 2.30 GHz, measured on demo board unless otherwise

speci ed.

Symbol Parameter and Test Condition Units Min. Typ. Max.

Ibias Vbias current mA – 41.0 –

Ic1 Vc1 current mA – -51.0 –

Ic2 Vc2 current mA – 10.0 –

Tx Ant IL Tx Antenna Insertion Loss dB – 0.37 –

Max Input Power

[4]

50 W CW power (5 mins testing) at Antenna port dBm – – 47.5

Ant RL Antenna Input Return Loss dB – 24.0 –

Notes:

1. Measurements at 2.30 GHz obtained using demo board described in Figure 12.

2. OIP3 test condition: F

RF1

= 2.30 GHz and F

RF2

= 2.301 GHz with input power of -25 dBm per tone measured at worst side band.

3. Use proper biasing, heat sink and de-rating to ensure maximum channel temperature is not exceeded.

4. Max Input Power was characterized during the product development stage. It is not  nal tested at production.

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ALM-12224-TR1G

Mfr. #:

Buy ALM-12224-TR1G

Manufacturer:

Broadcom / Avago

Description:

RF Amplifier LNA Module 2300-2400MHz

Lifecycle:

New from this manufacturer.

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ALM-12224-TR1G

ALM-12224-TR1G

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