BU406G

© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 11
1 Publication Order Number:
BU406/D
BU406, BU407
NPN Power Transistors
These devices are high voltage, high speed transistors for horizontal
deflection output stages of TV’s and CRT’s.
Features
High Voltage
Fast Switching Speed
Low Saturation Voltage
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage BU406
BU407
V
CEO
200
150
Vdc
Collector−Emitter Voltage BU406
BU407
V
CEV
400
330
Vdc
Collector−Base Voltage BU406
BU407
V
CBO
400
330
Vdc
Emitter−Base Voltage V
EBO
6 Vdc
Collector Current − Continuous
− Peak Repetitive
I
C
7
10
Adc
Collector Current − Peak (10 ms) I
CM
15 Adc
Base Current I
B
4 Adc
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
P
D
60
0.48
W
W/_C
Operating and Storage Junction
Temperature Storage
T
J
, T
stg
−65 to 150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
2.08
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
70
_C/W
Maximum Lead Temperature for Soldering
Purposes1/8 from Case for 5 Seconds
T
L
260
_C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
NPN SILICON
POWER TRANSISTORS
7 AMPERES − 60 WATTS
150 AND 200 VOLTS
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BU40x = Specific Device Code
x = 6 or 7
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
Device Package Shipping
ORDERING INFORMATION
BU406G TO−220AB
(Pb−Free)
50 Units / Rail
BU40xG
AY WW
BU407G TO−220AB
(Pb−Free)
50 Units / Rail
TO−220
CASE 221A
STYLE 1
MARKING
DIAGRAM
1
2
3
4
1
1
BASE
3
EMITTER
COLLECTOR
2,4
SCHEMATIC
BU406, BU407
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2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1) BU406
(I
C
= 100 mAdc, I
B
= 0) BU407
V
CEO(sus)
200
150
Vdc
Collector Cutoff Current
(V
CE
= Rated V
CEV
, V
BE
= 0)
(V
CE
= Rated V
CEO
+ 50 Vdc, V
BE
= 0)
(V
CE
= Rated V
CEO
+ 50 Vdc, V
BE
= 0, T
C
= 150_C)
I
CES
5
0.1
1
mAdc
Emitter Cutoff Current BU406, BU407
(V
EB
= 6 Vdc, I
C
= 0)
I
EBO
1 mAdc
ON CHARACTERISTICS (Note 1)
Collector−Emitter Saturation Voltage
(I
C
= 5 Adc, I
B
= 0.5 Adc)
V
CE(sat)
1 Vdc
Base−Emitter Saturation Voltage
(I
C
= 5 Adc, I
B
= 0.5 Adc)
V
BE(sat)
1.2 Vdc
Forward Diode Voltage
(I
EC
= 5 Adc) “D” only
V
EC
2 Volts
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f
test
= 20 MHz)
f
T
10 MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1 MHz)
C
ob
80 pF
SWITCHING CHARACTERISTICS
Inductive Load Crossover Time
(V
CC
= 40 Vdc, I
C
= 5 Adc, I
B1
= I
B2
= 0.5 Adc, L = 150 mH)
t
c
0.75
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 1%.
100
0.1
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (AMPS)
10
0.2 0.3 0.5 0.7 1 5 7 10
50
20
70
30
h
FE
, DC CURRENT GAIN
T
J
= 100°C
25°C
23
V
CE
= 5 V
10
2
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1
720
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
I
C
, COLLECTOR CURRENT (AMP)
3 5 30 50 70 200
0.1
10
T
C
= 25°C
Figure 2. Maximum Rated Forward
Bias Safe Operating Area
100
BU407
BU406
dc
BU406, BU407
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3
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75
B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
J 0.014 0.024 0.36 0.61
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
BU406/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
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SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
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copyright laws and is not for resale in any manner.

BU406G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 7A 200V 60W NPN
Lifecycle:
New from this manufacturer.
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