BYD33DGPHE3/73

Document Number: 88914 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 18-May-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Avalanche Glass Passivated Junction Fast Switching Rectifier
BYD33DGP thru BYD33MGP
Vishay General Semiconductor
New Product
FEATURES
Superectifier structure for high reliability condition
Cavity-free glass-passivated junction
Avalanche surge capability guaranteed
Fast reverse recovery time
Low switching losses, high efficiency
Low leakage current, typical I
R
less than 0.1 μA
High forward surge capability
Meets environmental standard MIL-S-19500
Solder dip 275 °C max. 10 s, per JESD 22-B106
AEC-Q101 qualified
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification of switching power
supplies, inverters, converters and freewheeling applications
for consumer, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-204AL, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
200 V to 1000 V
I
FSM
30 A
E
RSM
10 mJ, 7 mJ
t
rr
150 ns, 250 ns, 300 ns
I
R
5.0 μA
T
J
max. 175 °C
DO-204AL (DO-41)
SUPERECTIFIER
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYD33DGP BYD33GGP BYD33JGP BYD33KGP BYD33MGP UNIT
Device marking code 33DGP 33GGP 33JGP 33KGP 33MGP V
Maximum repetitive peak reverse voltage V
RRM
200 400 600 800 1000 V
Maximum DC blocking voltage V
DC
200 400 600 800 1000 V
Maximum average forward rectified current
0.375 " (9.5 mm) lead length at T
A
= 55 °C
I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
30 A
Non-repetitive peak reverse
avalanche energy at L = 120 mH,
T
J
= T
J
max. prior to surge
E
RSM
10 7 mJ
Maximum full load reverse current, full cycle
average 0.375" (9.5 mm) lead length T
A
= 55 °C
I
R(AV)
100 μA
Operating junction and
storage temperature range
T
J
, T
STG
- 65 to + 175 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88914
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 18-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYD33DGP thru BYD33MGP
Vishay General Semiconductor
New Product
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, PCB mounted
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL BYD33DGP BYD33GGP BYD33JGP BYD33KGP BYD33MGP UNIT
Maximum
instantaneous
forward voltage
1.0 A V
F
(1)
1.3 V
Maximum DC reverse
current at rated DC
blocking voltage
T
A
= 25 °C
I
R
5.0
μA
T
A
= 150 °C 200
Maximum reverse
recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
150 250 300 ns
Typical junction
capacitance
4.0 V, 1 MHz C
J
15 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYD33DGP BYD33GGP BYD33JGP BYD33KGP BYD33MGP UNIT
Typical thermal resistance R
JA
(1)
55 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
BYD33JGP-E3/54 0.336 54 5500 13" diameter paper tape and reel
BYD33JGP-E3/73 0.336 73 3000 Ammo pack packaging
BYD33JGPHE3/54
(1)
0.336 54 5500 13" diameter paper tape and reel
BYD33JGPHE3/73
(1)
0.336 73 3000 Ammo pack packaging
Ambient Temperature (°C)
Average Forward Rectied Current (A)
25
50
75
100
125
150
175
0
0.25
0.5
0.75
1.0
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
Number of Cycles at 60 Hz
Forward Surge Current (A)
1
10
100
0
10
20
30
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Document Number: 88914 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 18-May-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYD33DGP thru BYD33MGP
Vishay General Semiconductor
New Product
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (μA)
0
20
40
60
80
100
0.01
0.1
1
10
100
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
Reverse Voltage (V)
Junction Capacitance (pF)
1
10
100
1
10
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.01
0.1
1
10
100
0.1
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
DO-204AL (DO-41)
0.107 (2.7)
0.080 (2.0)
DIA.
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)

BYD33DGPHE3/73

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 200 Volt 1.0A 150ns Glass Passivated
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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