M27W401 Summary description
7/23
Figure 3. LCC Connections
Figure 4. TSOP Connections
AI01591
A17
A8
A10
Q5
17
A1
A0
Q0
Q1
Q2
Q3
Q4
A7
A4
A3
A2
A6
A5
9
A18
A9
1
A16
A11
A13
A12
Q7
32
V
PP
V
CC
M27W401
A15
A14
Q6
G
E
25
V
SS
A1
A0
Q0
A7
A4 A3
A2
A6
A5
A13
A10
A8
A9
Q7
A14
A11 G
E
Q5
Q1
Q2
Q3
Q4
Q6
A17
A18
A16
A12
V
PP
V
CC
A15
AI01592
M27W401
(Normal)
8
1
9
16 17
24
25
32
V
SS
Obsolete Product(s) - Obsolete Product(s)
Device description M27W401
8/23
2 Device description
Table 2 lists the operating modes of the M27W40. A single power supply is required in the
read mode. All inputs are TTL levels except for V
PP
and 12V on A9 for Electronic Signature.
Note: X = V
IH
or V
IL
, V
ID
= 12V ± 0.5V.
2.1 Read mode
The M27W401 has two control functions, both of which must be logically active in order to
obtain data at the outputs. Chip Enable (E
) is the power control and should be used for
device selection. Output Enable (G
) is the output control and should be used to gate data to
the output pins, independent of device selection. Assuming that the addresses are stable,
the address access time (t
AVQV
) is equal to the delay from E to output (t
ELQV
). Data is
available at the output after a delay of t
GLQV
from the falling edge of G, assuming that E has
been low and the addresses have been stable for at least t
AVQV
-t
GLQV
.
2.2 Standby mode
The M27W401 has a standby mode which reduces the supply current from 15mA to 15µA
with low voltage operation V
CC
3.6V, see Read Mode DC Characteristics table for details.
The M27W401 is placed in the standby mode by applying a CMOS high signal to the E
input. When in the standby mode, the outputs are in a high impedance state, independent of
the G
input.
2.3 Two-line output control
Because EPROMs are usually used in larger memory arrays, this product features a 2 line
control function which accommodates the use of multiple memory connection. The two line
control function allows:
the lowest possible memory power dissipation,
complete assurance that output bus contention will not occur.
For the most efficient use of these two control lines, E
should be decoded and used as the
primary device selecting function, while G
should be made a common connection to all
Table 2. Operating modes
Mode E G A9 V
PP
Q7-Q0
Read V
IL
V
IL
XV
CC
or V
SS
Data Out
Output Disable V
IL
V
IH
XV
CC
or V
SS
Hi-Z
Program V
IL
Pulse V
IH
XV
PP
Data In
Verify V
IH
V
IL
XV
PP
Data Out
Program Inhibit V
IH
V
IH
XV
PP
Hi-Z
Standby V
IH
XXV
CC
or V
SS
Hi-Z
Electronic Signature V
IL
V
IL
V
ID
V
CC
Codes
Obsolete Product(s) - Obsolete Product(s)
M27W401 Device description
9/23
devices in the array and connected to the READ line from the system control bus. This
ensures that all deselected memory devices are in their low power standby mode and that
the output pins are only active when data is required from a particular memory device.
2.4 System considerations
The power switching characteristics of Advanced CMOS EPROMs require careful
decoupling of the devices. The supply current, I
CC
, has three segments that are of interest to
the system designer: the standby current level, the active current level, and transient current
peaks that are produced by the falling and rising edges of E
. The magnitude of the transient
current peaks is dependent on the capacitive and inductive loading of the device at the
output.
The associated transient voltage peaks can be suppressed by complying with the two line
output control and by properly selected decoupling capacitors. It is recommended that a
0.1µF ceramic capacitor be used on every device between V
CC
and V
SS
. This should be a
high frequency capacitor of low inherent inductance and should be placed as close to the
device as possible. In addition, a 4.7µF bulk electrolytic capacitor should be used between
V
CC
and V
SS
for every eight devices. The bulk capacitor should be located near the power
supply connection point.The purpose of the bulk capacitor is to overcome the voltage drop
caused by the inductive effects of PCB traces.
2.5 Programming
The M27W401 has been designed to be fully compatible with the M27C4001 and has the
same electronic signature. As a result the M27W401 can be programmed as the M27C4001
on the same programming equipment applying 12.75V on V
PP
and 6.25V on V
CC
by the use
of the same PRESTO II algorithm.
When delivered (and after each ‘1’s erasure for UV EPROM), all bits of the M27W401 are in
the '1' state. Data is introduced by selectively programming '0's into the desired bit locations.
Although only '0's will be programmed, both '1's and '0's can be present in the data word.
The only way to change a ‘0’ to a ‘1’ is by die exposure to ultraviolet light (UV EPROM). The
M27W401 is in the programming mode when V
PP
input is at 12.75V, G is at V
IH
and E is
pulsed to V
IL
. The data to be programmed is applied to 8 bits in parallel to the data output
pins. The levels required for the address and data inputs are TTL. V
CC
is specified to be
6.25V ± 0.25V
2.6 Presto II programming algorithm
Presto II Programming Algorithm allows the whole array to be programmed with a
guaranteed margin, in a typical time of 52.5 seconds. Programming with Presto II consists of
applying a sequence of 100µs program pulses to each byte until a correct verify occurs (see
Figure 5). During programming and verify operation, a Margin mode circuit is automatically
activated in order to guarantee that each cell is programmed with enough margin. No
overprogram pulse is applied since the verify in Margin mode at VCC much higher than
3.6V, provides the necessary margin to each programmed cell.
Obsolete Product(s) - Obsolete Product(s)

M27W401-80K6

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
EPROM 4M (512Kx8) 80ns
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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