1N4150TAP

1N4150
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 05-Dec-13
1
Document Number: 85522
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diodes
MECHANICAL DATA
Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
Silicon epitaxial planar diode
Low forward voltage drop
AEC-Q101 qualified
High forward current capability
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
High speed switch and general purpose use in computer
and industrial applications
PARTS TABLE
PART ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS
1N4150 1N4150TR or 1N4150TAP 1N4150 Single diode Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
RRM
50 V
Reverse voltage V
R
50 V
Peak forward surge current t
p
= 1 μs I
FSM
4A
Average peak forward current I
FRM
600 mA
Forward continuous current I
F
300 mA
Average forward current V
R
= 0 I
F(AV)
150 mA
Power dissipation
l = 4 mm, T
L
= 45 °C P
tot
440 mW
l = 4 mm, T
L
25 °C P
tot
500 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air l = 4 mm, T
L
= constant R
thJA
350 K/W
Junction temperature T
j
175 °C
Storage temperature range T
stg
- 65 to + 175 °C
1N4150
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 05-Dec-13
2
Document Number: 85522
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Current vs. Junction Temperature Fig. 2 - Forward Current vs. Forward Voltage
PACKAGE DIMENSIONS in millimeters (inches): DO-35
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 1 mA V
F
0.540 0.620 V
I
F
= 10 mA V
F
0.660 0.740 V
I
F
= 50 mA V
F
0.760 0.860 V
I
F
= 100 mA V
F
0.820 0.920 V
I
F
= 200 mA V
F
0.870 1 V
Reverse current
V
R
= 50 V I
R
100 nA
V
R
= 50 V, T
j
= 150 °C I
R
100 μA
Diode capacitance
V
R
= 0 V, f = 1 MHz,
V
HF
= 50 mV
C
D
2.5 pF
Reverse recovery time
I
F
= I
R
= (10 to 100) mA,
i
R
= 0.1 x I
R
, R
L
= 100
t
rr
4ns
0 40 80 120 160 200
0.01
0.1
1
10
100
I - Reverse Current (µA)
R
T
J
- Junction Temperature (°C)
94 9100
Scattering Limit
V
R
= 50 V
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I - Forward Current (mA)
F
V
F
- Forward Voltage (V)
2.0
94 9162
Scattering Limit
T
J
= 25 °C
94 9366
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024]
Cathode Identication
1.7 [0.067]
1.3 [0.050]
3.1 min. [0.120]
Ø 0.6 max. [0.024]
Ø 0.4 min. [0.015]
Legal Disclaimer Notice
www.vishay.com
Vishay
Revision: 08-Feb-17
1
Document Number: 91000
Disclaimer
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1N4150TAP

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Diodes - General Purpose, Power, Switching Vr/50V Io/150mA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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