FDMS2380 Dual Integrated Solenoid Driver
FDMS2380 Rev. A
www.fairchildsemi.com3
Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Ordering Information
Notes:
1. R
θJA
is measured with 1.0 in
2
copper on FR-4 board. R
θJC
is guaranteed by design while R
θJA
is determined by the user’s board design.
2. The FDMS2380 requires one or more high quality local bypass capacitors (i.e., low ESL, low ESR and located physically close to the VBATT/Ground terminals of
the device) to prevent fast transients on the V
BATT
line from affecting the operation of the device. More specifically, the bypass scheme must reduce transients
with an amplitude passing through V
BATT(ov)
to have a rise time of less than 2.2V/µs.
Symbol Parameter Ratings Units
I
OUT(rev)
Maximum Reverse Output Current -4 A
V
BATT(max)
Maximum DC Supply Voltage (Note 2) 60 V
I
IN
Input Currents 10 mA
V
IN(max)
Maximum Input Voltage 8 V
I
DIAG
Diagnostic Output Current 10 mA
V
DIAG(max)
Maximum Diagnostic Output Voltage 8 V
P
D
Total Power dissipation 7 W
Power dissipation V
BATT
pad 2.3 W
Power dissipation OUT pads: P
D(OUT)
= P
D(OUT1)
+ P
D(OUT2)
4.6 W
T
J
, T
STG
Operating and Storage Temperature -40 to 160
o
C
R
θJC
Thermal Resistance Junction to Case: OUT pad 3.5
o
C/W
R
θJC
Thermal Resistance Junction to Case: V
BATT
pad 4.0
o
C/W
R
θJA
Thermal Resistance Junction to Ambient: OUT pad (Note 1) 60
o
C/W
R
θJA
Thermal Resistance Junction to Ambient: V
BATT
pad (Note 1) 60
o
C/W
Part Number Package
Packing
Method
Reel Size Tape Width Quantity
FDMS2380 18 pin QFN Tape & Reel 330mm 24mm 2000
