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IXYP10N65C3D1M

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYP10N65C3D1M
Fig. 7. Transconductance
0
1
2
3
4
5
6
7
8
9
0 2 4 6 8 10 12 14 16 18 20
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
150ºC
25ºC
V
CE
= 10V
Fig. 10. Reverse-Bias Safe Operating Area
0
4
8
12
16
20
100 200 300 400 500 600 700
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 50
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 2 4 6 8 10 12 14 16 18
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 325V
I
C
= 10A
I
G
= 1mA
Fig. 9. Capacitance
1
10
100
1,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
C
ies
C
oes
C
res
Fig. 12. Maximum Transient Thermal Impedance (IGBT)
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 11. Forward-Bias Safe Operating Area
0.01
0.1
1
10
100
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
V
CE(sat)
Limi
t
100µs
DC
100ms
1s
10ms
© 2014 IXYS CORPORATION, All Rights Reserved
IXYP10N65C3D1M
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
0.0
0.1
0.2
0.3
0.4
0.5
0.6
50 60 70 80 90 100 110 120
R
G
- Ohms
E
off
- MilliJoules
0.0
0.4
0.8
1.2
1.6
2.0
2.4
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 400V
I
C
= 10A
I
C
= 20A
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
25
30
35
40
45
50
55
50 60 70 80 90 100 110 120
R
G
- Ohms
t
f i
- Nanoseconds
40
60
80
100
120
140
160
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 10A
I
C
= 20A
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
0.0
0.1
0.2
0.3
0.4
0.5
4 6 8 101214161820
I
C
- Amperes
E
off
- MilliJoules
0.0
0.4
0.8
1.2
1.6
2.0
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 50
Ω
,
V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
0.0
0.1
0.2
0.3
0.4
0.5
0.6
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.2
0.4
0.6
0.8
1.0
1.2
1.4
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 50
Ω ,
V
GE
= 15V
V
CE
= 400V
I
C
= 10A
I
C
= 20A
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
15
20
25
30
35
40
45
50
55
4 6 8 101214161820
I
C
- Amperes
t
f i
- Nanoseconds
50
60
70
80
90
100
110
120
130
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 50
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
15
20
25
30
35
40
45
50
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanosecond
s
40
50
60
70
80
90
100
110
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 50
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 20A
I
C
= 10A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYP10N65C3D1M
IXYS REF: IXY_10N65C3(1D)3-11-14-A
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
0
10
20
30
40
50
60
70
80
90
4 6 8 10 12 14 16 18 20
I
C
- Amperes
t
r i
- Nanosecond
s
12
14
16
18
20
22
24
26
28
30
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 50
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 25ºC
T
J
= 150ºC
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
10
20
30
40
50
60
70
80
90
100
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
14
16
18
20
22
24
26
28
30
32
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 50
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 20A
I
C
= 10A
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
0
20
40
60
80
100
120
140
160
50 60 70 80 90 100 110 120
R
G
- Ohms
t
r i
- Nanosecond
s
0
10
20
30
40
50
60
70
80
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 10A
I
C
= 20A
Fig. 22. Maximum Transient Thermal Impedance (Diode)
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100
Pulse Width - Seconds
Z
(th)JC
- ºC / W
P1-P3P4-P6

IXYP10N65C3D1M

Mfr. #:
Buy IXYP10N65C3D1M
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT XPT-GENX3
Lifecycle:
New from this manufacturer.
Delivery:
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