GSOT03 to GSOT36
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Vishay Semiconductors
Rev. 2.4., 23-Feb-16
4
Document Number: 85807
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BiAs-MODE (1-line Bidirectional Asymmetrical protection mode)
With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and
pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is
between 0 V (ground level) and the specified maximum reverse working voltage (V
RWM
) the protection diode between pin 1 and
pin 3 offers a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the breakdown voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (V
C
) is defined by the breakdown voltage (V
BR
) level plus the voltage drop at the series impedance (resistance
and inductance) of the protection diode.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction
through the protection diode. The low forward voltage (V
F
) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behavior is Bidirectional and
Asymmetrical (BiAs).
20422
L1
1
2
3
Ground
BiAs
ELECTRICAL CHARACTERISTICS GSOT03 (T
amb
= 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--3.3V
Reverse voltage at I
R
= 100 μA V
R
3.3 - - V
Reverse current at V
R
= 3.3 V I
R
- - 100 μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
44.65.5V
Reverse clamping voltage
at I
PP
= 1 A
V
C
-5.77.5V
at I
PP
= I
PPM
= 30 A - 10 12.3 V
Forward clamping voltage
at I
PP
= 1 A
V
F
-11.2V
at I
PP
= I
PPM
= 30 A - 4.5 - V
Capacitance
at V
R
= 0 V; f = 1 MHz
C
D
- 420 600 pF
at V
R
= 1.6 V; f = 1 MHz - 260 - pF
ELECTRICAL CHARACTERISTICS GSOT04 (T
amb
= 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--4V
Reverse voltage at I
R
= 20 μA V
R
4--V
Reverse current at V
R
= 4 V I
R
--20μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
56.17 V
