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NTR4170NT3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2007
October, 2016 − Rev. 2
1 Publication Order Number:
NTR4170N/D
NTR4170N
Power MOSFET
30 V, 3.1 A, Single N−Channel, SOT−23
Features
• Low R
DS(on)
• Low Gate Charge
• Low Threshold Voltage
• Halide Free
• This is a Pb−Free Device
Applications
• Power Converters for Portables
• Battery Management
• Load/Power Switch
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±12 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
2.4
A
t ≤ 30 s 3.1
t ≤ 10 s 3.9
Steady
State
T
A
= 85°C
1.7
t ≤ 30 s 2.3
t ≤ 10 s 2.8
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C
P
D
0.48
W
t ≤ 30 s 0.82
t ≤ 10 s P
D
1.25
Pulsed Drain Current
t
p
=10 ms
I
DM
8.0 A
Operating Junction and Storage Temperature T
J
,
T
stg
−55 to
150
°C
Source Current (Body Diode) I
S
0.82 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
R
q
JA
260
°C/W
Junction−to−Ambient − t ≤ 30 s
R
q
JA
153
Junction−to−Ambient − t < 10 s (Note 1)
R
q
JA
100
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
G
D
S
Device Package Shipping
†
ORDERING INFORMATION
www.onsemi.com
30 V 70 mW @ 4.5 V
55 mW @ 10 V
R
DS(on)
MAX
3.1 A
I
D
MAXV
(BR)DSS
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
2
3
1
3
Drain
1
Gate
2
Source
SIMPLIFIED SCHEMATIC − N−CHANNEL
NTR4170NT1G SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
110 mW @ 2.5 V
1
TREMG
G
TRE = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
2.8 A
2.0 A
NTR4170NT3G SOT−23
(Pb−Free)
10000/Tape & Reel
NTR4170N
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= 250 mA, Reference to 25°C
26.4 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= 24 V, T
J
= 25°C
V
GS
= 0 V, V
DS
= 24 V, T
J
= 125°C
1.0
5.0
mA
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= "12 V $100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
0.6 1.0 1.4 V
Negative Threshold Temperature Co-
efficient
V
GS(TH)
/T
J
3.3 mV/°C
Drain−to−Source On−Resistance R
DS(on)
V
GS
= 10 V, I
D
= 3.2 A 45 55 mW
V
GS
= 4.5 V, I
D
= 2.8 A 50 70
V
GS
= 2.5 V, I
D
= 2.0 A 64 110
Forward Transconductance g
FS
V
DS
= 5.0 V, I
D
= 3.2 A 8.0 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 15 V
432
pF
Output Capacitance C
oss
53.6
Reverse Transfer Capacitance C
rss
37.1
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 3.2 A
4.76
nC
Threshold Gate Charge Q
G(TH)
0.3
Gate−to−Source Charge Q
GS
1.0
Gate−to−Drain Charge Q
GD
1.4
Gate Resistance R
G
3.8
W
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V (Note 4)
Turn−On Delay Time
t
d(on)
V
GS
= 4.5 V, V
DD
= 15 V,
I
D
= 3.2 A, R
G
= 6.2 W
6.4
ns
Rise Time t
r
9.9
Turn−Off Delay Time t
d(off)
15.1
Fall Time t
f
3.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 1.0 A, T
J
= 25°C 0.75 1.0 V
Reverse Recovery Time t
RR
V
GS
= 0 V, I
S
= 1.0 A,
dI
SD
/d
t
= 100 A/ms
8.0
ns
Charge Time t
a
5.1
Discharge Time t
b
2.9
Reverse Recovery Charge Q
RR
2.9 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surface−mounted on FR4 board using 1 in sq pad size (CU area = 1.127 in sq [2 oz] including traces).
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTR4170N
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
3.02.52.01.51.00.50
0
0.5
1.0
1.5
2.0
2.5
3.5
2.42.01.61.00.80.6
0
1.0
2.0
3.0
4.0
5.0
7.0
Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
105.04.03.02.01.0
0.02
0.04
0.06
0.10
4.03.02.52.01.51.0
0
0.01
0.02
0.03
0.05
0.06
0.07
0.08
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.6
0.8
1.0
1.2
1.4
1.6
252015105.0
10
100
1000
10,000
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
V
GS
= 1.4 V
1.5 V
1.6 V
2.0 V
2.5 V
10 V
4.5 V
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
V
DS
≥ 10 V
0.08
0.12
I
D
= 3.2 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.04
T
J
= 25°C
V
GS
= 2.5 V
V
GS
= 4.5 V
I
D
= 3.2 A
V
GS
= 10 V
150
30
V
GS
= 0 V
T
J
= 125°C
T
J
= 150°C
3.0
1.7 V
1.8 V
T
J
= 25°C
6.0
1.2 1.4 1.8 2.2
6.0 7.0 8.0 9.0 3.5
V
GS
= 10 V
P1-P3P4-P5

NTR4170NT3G

Mfr. #:
Buy NTR4170NT3G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SOT23 30V 4A
Lifecycle:
New from this manufacturer.
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