TC74VHC08F(EL,K,F) Datasheet TC74VHC08F(EL,K,F), TC74VHC08FK(EL,K) | P1-P3

TC74VHC08F/FT/FK

2014-03-01

1

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC74VHC08F, TC74VHC08FT, TC74VHC08FK

Quad 2-Input AND Gate

The TC74VHC08 is an advanced high speed CMOS 2-INPUT

AND GATE fabricated with silicon gate C

2

MOS technology.

It achieves the high speed operation similar to equivalent

Bipolar Schottky TTL while maintaining the CMOS low power

dissipation.

The internal circuit is composed of 4 stages including buffer

output, which provide high noise immunity and stable output.

An input protection circuit ensures that 0 to 5.5 V can be

applied to the input pins without regard to the supply voltage.

This device can be used to interface 5 V to 3 V systems and two

supply systems such as battery back up. This circuit prevents

device destruction due to mismatched supply and input voltages.

Features

• High speed: t

pd

= 4.3 ns (typ.) at V

CC

= 5 V

• Low power dissipation: I

CC

= 2 μA (max) at Ta = 25°C

• High noise immunity: V

NIH

= V

NIL

= 28% V

CC

(min)

• Power down protection is provided on all inputs.

• Balanced propagation delays: t

pLH

∼

−

t

pHL

• Wide operating voltage range: V

CC (opr)

= 2 V to 5.5 V

• Low noise: V

OLP

= 0.8 V (max)

• Pin and function compatible with 74ALS08

Weight

SOP14-P-300-1.27A : 0.18 g (typ.)

TSSOP14-P-0044-0.65A : 0.06 g (typ.)

VSSOP14-P-0030-0.50 : 0.02 g (typ.)

TC74VHC08F

TC74VHC08FT

TC74VHC08FK

Start of commercial production

1991-05

TC74VHC08F/FT/FK

2014-03-01

2

Pin Assignment IEC Logic Symbol

Truth Table

A B Y

L L L

L H L

H L L

H H H

Absolute Maximum Ratings (Note)

Characteristics Symbol Rating Unit

Supply voltage range V

CC

−0.5 to 7.0 V

DC input voltage V

IN

−0.5 to 7.0 V

DC output voltage V

OUT

−0.5 to V

CC

+ 0.5 V

Input diode current I

IK

−20 mA

Output diode current I

OK

±20 mA

DC output current I

OUT

±25 mA

DC V

CC

/ground current I

CC

±50 mA

Power dissipation P

D

180 mW

Storage temperature T

stg

−65 to 150 °C

Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or

even destruction.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

V

CC

9

4B

4A

4Y

8

14

13

12

11

10

1A

1

2

3

4

5

6

7

2A

2B

2Y

GND

3B

3A

3Y

(top view)

1B

1Y

(4)

(9)

(5)

2A

&

3A

2B

(12)

(10)

(13)

4A

3B

(6)

(8)

(11)

2Y

3Y

4Y

4B

(1)

(2)

1A

1B

(3)

1Y

TC74VHC08F/FT/FK

2014-03-01

3

Operating Ranges (Note)

Characteristics Symbol Rating Unit

Supply voltage V

CC

2.0 to 5.5 V

Input voltage V

IN

0 to 5.5

V

Output voltage V

OUT

0 to V

CC

V

Operating temperature T

opr

−40 to 85 °C

Input rise and fall time dt/dv

0 to 100 (V

CC

= 3.3 ± 0.3 V)

0 to 20 (V

CC

= 5 ± 0.5 V)

ns/V

Note: The operating ranges must be maintained to ensure the normal operation of the device.

Unused inputs must be tied to either V

CC

or GND.

Electrical Characteristics

DC Characteristics

Test Condition Ta = 25°C

Ta =

−40 to 85°C

Characteristics Symbol

V

CC

(V)

Min Typ. Max Min Max

Unit

High-level input

voltage

V

IH

―

2.0

3.0 to 5.5

1.50

V

CC

×

0.7

―

1.50

V

CC

×

0.7

―

V

Low-level input

voltage

V

IL

―

2.0

3.0 to 5.5

―

0.50

V

CC

×

0.3

―

0.50

V

CC

×

0.3

V

I

OH

= −50 μA

2.0

3.0

4.5

1.9

2.9

4.4

2.0

3.0

4.5

―

1.9

2.9

4.4

―

High-level output

voltage

V

OH

V

IN

= V

IH

I

OH

= −4 mA

I

OH

= −8 mA

3.0

4.5

2.58

3.94

―

2.48

3.80

―

V

I

OL

= 50 μA

2.0

3.0

4.5

―

0.0

0.1

―

0.1

Low-level output

voltage

V

OL

V

IN

= V

IH

or V

IL

I

OL

= 4 mA

I

OL

= 8 mA

3.0

4.5

―

0.36

―

0.44

V

Input leakage

current

I

IN

V

IN

= 5.5 V or GND 0 to 5.5 ― ― ±0.1 ― ±1.0 μA

Quiescent supply

current

I

CC

V

IN

= V

CC

or GND 5.5 ― ― 2.0 ― 20.0 μA

TC74VHC08F(EL,K,F)

TC74VHC08F(EL,K,F)

Products related to this Datasheet