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VS-HFA15TB60-M3

P1-P3P4-P6P7-P7
VS-HFA15TB60-M3
www.vishay.com
Vishay Semiconductors
Revision: 23-Nov-17
1
Document Number: 96191
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
HEXFRED
®
,
Ultrafast Soft Recovery Diode, 15 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Designed and qualified according to
JEDEC
®
-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA15TB60... is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 15 A continuous current, the
VS-HFA15TB60... is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
®
product line features
extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to “snap-off” during the t
b
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA15TB60... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRIMARY CHARACTERISTICS
I
F(AV)
15 A
V
R
600 V
V
F
at I
F
1.2 V
t
rr
typ. 23 ns
T
J
max. 150 °C
Circuit configuration Single
Package 2L TO-220AC
2L TO-220AC
1
2
3
Anode
1
3
Cathode
Base
cathode
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
600 V
Maximum continuous forward current I
F
T
C
= 100 °C 15
ASingle pulse forward current I
FSM
150
Maximum repetitive forward current I
FRM
60
Maximum power dissipation P
D
T
C
= 25 °C 74
W
T
C
= 100 °C 29
Operating junction and storage temperature range T
J
, T
Stg
-55 to +150 °C
VS-HFA15TB60-M3
www.vishay.com
Vishay Semiconductors
Revision: 23-Nov-17
2
Document Number: 96191
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA 600 - -
V
Maximum forward voltage V
FM
I
F
= 15 A
See fig. 1
-1.31.7
I
F
= 30 A - 1.5 2.0
I
F
= 15 A, T
J
= 125 °C - 1.2 1.6
Maximum reverse
leakage current
I
RM
V
R
= V
R
rated
T
J
= 125 °C, V
R
= 0.8 x V
R
rated
See fig. 2
-1.010
μA
- 400 1000
Junction capacitance C
T
V
R
= 200 V See fig. 3 - 25 50 pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5
t
rr
I
F
= 1.0 A, di
F
/dt = 200 A/μs, V
R
= 30 V - 19 -
nst
rr1
T
J
= 25 °C
I
F
= 15 A
di
F
/dt = 200 A/μs
V
R
= 200 V
-4260
t
rr2
T
J
= 125 °C - 74 120
Peak recovery current
See fig. 6
I
RRM1
T
J
= 25 °C - 4.0 6.0
A
I
RRM2
T
J
= 125 °C - 6.5 10
Reverse recovery charge
See fig. 7
Q
rr1
T
J
= 25 °C - 84 180
nC
Q
rr2
T
J
= 125 °C - 241 600
Peak rate of fall of recovery
current during t
b
See fig. 8
di
(rec)M
/dt1 T
J
= 25 °C - 188 -
A/μs
di
(rec)M
/dt2 T
J
= 125 °C - 160 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance,
junction to case
R
thJC
--1.7
K/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 80
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style 2L TO-220AC HFA15TB60
VS-HFA15TB60-M3
www.vishay.com
Vishay Semiconductors
Revision: 23-Nov-17
3
Document Number: 96191
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1.0 2.41.2 1.4
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
1.8 2.2
2.01.6
0.01
0.1
1
10
100
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
T
J
= 125 °C
T
J
= 25 °C
1000
100 600500
300
10 000
T
J
= 150 °C
400200
10
100
10 100 1000
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
Single pulse
(thermal response)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P1-P3P4-P6P7-P7

VS-HFA15TB60-M3

Mfr. #:
Buy VS-HFA15TB60-M3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 600V 15A TO-220 HexFred
Lifecycle:
New from this manufacturer.
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