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350-00017

P1-P3P4-P4
0.030 (0.76)
NOM
0.116 (2.95)
0.193 (4.90)
0.800 (20.3)
MIN
0.050 (1.27)
0.100 (2.54)
NOM
0.018 (0.46)
SQ. (2X)
0.155 (3.94)
CATHODE
0.052 (1.32)
0.032 (0.082)
REFERENCE
SURFACE
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
ANODE
CATHODE
SCHEMATIC
2001 Fairchild Semiconductor Corporation
DS300334 5/21/01 1 OF 3 www.fairchildsemi.com
PACKAGE DIMENSIONS
DESCRIPTION
The QEC11X is an 940 nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package.
QEC112 QEC113
FEATURES
• D= 940 nm
• Chip material = GaAs
• Package type: T-1 (3mm)
• Matched Photosensor: QSC112
• Narrow Emission Angle, 24°
• High Output Power
• Package material and color: Clear, peach tinted plastic
PLASTIC INFRARED
LIGHT EMITTING DIODE
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-40 to +100 °C
Storage Temperature T
STG
-40 to +100 °C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec °C
Continuous Forward Current I
F
50 mA
Reverse Voltage V
R
5V
Power Dissipation
(1)
P
D
100 mW
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Peak Emission Wavelength I
F
= 100 mA D
PE
— 940 — nm
Emission Angle I
F
= 100 mA 201/
2
24 Deg.
Forward Voltage I
F
= 100 mA, tp = 20 ms V
F
— — 1.5 V
Reverse Current V
R
= 5 V I
R
——10µA
Radiant Intensity QEC112 I
F
= 100 mA, tp = 20 ms I
E
6 — 30 mW/sr
Radiant Intensity QEC113 I
F
= 100 mA, tp = 20 ms I
E
14 — — mW/sr
Rise Time
I
F
= 100 mA
t
r
— 1000 — ns
Fall Time t
f
— 1000 — ns
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C)
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron
1/16” (1.6mm) minimum from housing.
QEC112 QEC113
PLASTIC INFRARED
LIGHT EMITTING DIODE
www.fairchildsemi.com 2 OF 4 5/21/01 DS300334
Fig.1 Normalized Radiant Intensity vs. Forward Current
I
F
- FORWARD CURRENT (mA) LENS TIP SEPARATION (INCHES)
1 10 100 1000
I
e
- NORMALIZED RADIANT INTENSITY
V
F
- FORWARD VOLTAGE (V)
0.001
0.01
0.1
1
10
Normalized to:
I
F
= 100 mA Pulsed
t
pw
= 100 µs
Duty Cycle = 0.1 %
T
A
= 25˚C
Fig.2 Coupling Characteristics of QEC11X And QSC11X
012345678
I
C
(ON) - NORMALIZED COLLECTOR CURRENT (mA)
0.0
0.2
0.4
0.6
0.8
1.0
Normalized to:
d = 0
I
F
Pulsed
t
pw
= 100 µs
Duty Cycle = 0.1 %
V
CC
= 5 V
R
L
= 100 Ω
T
A
= 25˚C
I
F
= 100 mA
I
F
= 20 mA
Fig.3 Forward Voltage vs. Ambient Temperature
T
A
- AMBIENT TEMPERATURE (˚C)
-40 -20 0 20 40 60 80 100
0.0
0.5
1.0
1.5
2.0
Normalized to:
I
F
Pulsed
t
pw
= 100 µs
Duty Cycle = 0.1 %
I
F
= 100 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 20 mA
Fig. 5
Radiation Diagram
0.0 0.2 0.4 0.6 0.8 1.0
0.0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
Fig. 4 Normalized Intensity vs. Wavelength
λ (nm)
875 900 925 950 975 1000 1025
NORMALIZED INTENSITY
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
QEC112 QEC113
PLASTIC INFRARED
LIGHT EMITTING DIODE
TYPICAL PERFORMANCE CURVES
DS300334 5/21/01 3 OF 4 www.fairchildsemi.com
P1-P3P4-P4

350-00017

Mfr. #:
Buy 350-00017
Manufacturer:
Parallax
Description:
Infrared Transceivers IR Transmitter Assembly Kit
Lifecycle:
New from this manufacturer.
Delivery:
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