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NCR100W-10LX
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
WeEn Semiconductors
NCR100W-10L
SCR
NCR100W-10L
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
27 June 2016
7 / 14
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
Fig. 7
15
-
50
µA
I
L
latching current
V
D
= 12 V; I
G
= 0.5 mA; T
j
= 25 °C;
R
GK(ext)
= 1 kΩ;
Fig. 8
-
-
6
mA
I
H
holding current
V
D
= 12 V; T
j
= 25 °C; R
GK(ext)
= 1 kΩ;
Fig. 9
-
-
3
mA
V
T
on-state voltage
I
T
= 1.2 A; T
j
= 25 °C;
Fig. 10
-
1.25
1.7
V
V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
Fig. 11
-
0.5
0.8
V
V
GT
gate trigger voltage
V
D
= 850 V; I
T
= 10 mA; T
j
= 125 °C;
Fig. 11
0.3
0.5
-
V
I
D
off-state current
V
D
= 850 V; R
GK(ext)
= 1 kΩ; T
j
= 125 °C
-
0.05
1
mA
I
R
reverse current
V
R
= 850 V; T
j
= 125 °C; R
GK(ext)
= 1 kΩ
-
0.05
1
mA
Dynamic charateristics
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 569 V; T
j
= 125 °C; R
GK
= 1 kΩ;
(V
DM
= 67% of V
DRM
); exponential
waveform
100
-
-
V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 2 A; V
D
= 850 V; I
G
= 10 mA; dI
G
/
dt = 0.1 A/µs; T
j
= 25 °C
-
2
-
µs
t
q
commutated turn-off
time
V
DM
= 569 V; T
j
= 125 °C; I
TM
= 1.6 A;
V
R
= 35 V; (dI
T
/dt)
M
= 30 A/µs; dV
D
/
dt = 2 V/µs; R
GK(ext)
= 1 kΩ; (V
DM
=
67% of V
DRM
)
-
100
-
µs
T
j
(°C)
-50
150
100
0
50
001aab502
1
2
3
0
I
GT
I
GT(25°C)
Fig. 7. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-50
150
100
0
50
001aab503
1
2
3
0
I
L
I
L(25°C)
R
GK
= 1 kΩ
Fig. 8. Normalized latching current as a function of
junction temperature
WeEn Semiconductors
NCR100W-10L
SCR
NCR100W-10L
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
27 June 2016
8 / 14
T
j
(°C)
-50
150
100
0
50
001aab504
1
2
3
0
I
H
I
H(25°C)
R
GK
= 1 kΩ
Fig. 9. Normalized holding current as a function of
junction temperature
aaa-015825
V
T
(V)
0
3
2
1
2
3
1
4
5
I
T
(A)
0
(1)
(2)
(3)
V
o
= 1.173 V; R
s
= 0.216 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
T
j
(°C)
-50
150
100
0
50
001aab501
0.8
1.2
1.6
0.4
V
GT
V
GT(25°C)
Fig. 11. Normalized gate trigger voltage as a function of junction temperature
WeEn Semiconductors
NCR100W-10L
SCR
NCR100W-10L
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
27 June 2016
9 / 14
11. Package outline
UNIT
A
1
b
p
c
D
E
e
1
H
E
L
p
Q
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
0.10
0.01
1.8
1.5
0.80
0.60
b
1
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
2.3
e
4.6
7.3
6.7
1.1
0.7
0.95
0.85
0.1
0.
1
0.2
DIMENSIONS (mm are the original dimensions)
SOT223
SC-73
04-11-10
06-03-16
w
M
b
p
D
b
1
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
v
M
A
A
B
B
c
y
0
2
4 mm
scale
A
X
1
3
2
4
Plastic surface-mounted package with increase
d heatsink; 4
leads
SOT223
Fig. 12. Package outline SC-73 (SOT223)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
NCR100W-10LX
Mfr. #:
Buy NCR100W-10LX
Manufacturer:
WeEn Semiconductors
Description:
SCRs Silicon Controlled Rectifier
Lifecycle:
New from this manufacturer.
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