PRELIMINARY
I
NTEGRATED
C
IRCUITS
D
IVISION
PRELIMINARY
DS-CPC3909-R00C
1
CPC3909
400V N-Channel
Depletion-Mode FET
Part Number Description
CPC3909CTR SOT-89: Tape and Reel (1000/Reel)
CPC3909ZTR SOT-223: Tape and Reel (1000/Reel)
Applications
Features
Description
Ordering Information
Package Pinout:
• LED Drive Circuits
• Telecommunications
• Normally On Switches
• Ignition Modules
• Converters
• Security
• Power Supplies
• Regulators
• 400V Drain-to-Source Voltage
• Depletion Mode Device Offers Low R
DS(on)
at Cold Temperatures
• Low On-Resistance: 4.5 (Typical) @ 25°C
• Low V
GS(off)
Voltage
• High Input Impedance
• Low Input and Output Leakage
• Small Package Size SOT-89 and SOT-223
• PC Card (PCMCIA) Compatible
• PCB Space and Cost Savings
The CPC3909 is an N-channel, depletion mode Field
Effect Transistor (FET) that is available in an
SOT-223 package (CPC3909Z) and an SOT-89
package (CPC3909C). Both utilize IXYS Integrated
Circuits Division’s proprietary third-generation
vertical DMOS process that realizes world class,
high voltage MOSFET performance in an economical
silicon gate process. The vertical DMOS process
yields a highly reliable device, particularly for
use in difficult application environments such as
telecommunications, security, and power supplies.
CPC3909Z and the CPC3909C have a typical
on-resistance of 4.5 and a drain-to-source voltage
of 400V. As with all MOS devices, the FET structure
prevents thermal runaway and thermally induced
secondary breakdown.
Pin Number Name
1GATE
2 DRAIN
3 SOURCE
4 DRAIN
Parameter Rating Units
Drain-to-Source Voltage - V
(BR)DSX
400 V
Max On-Resistance - R
DS(on)
9
Max Power
SOT-89 Package 1.1
W
SOT-223 Package 2.5
Circuit Symbol
D
G D S
4
123
D
S
G