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S1PMHE3/85A

P1-P3P4-P5
New Product
S1PB thru S1PM
Vishay General Semiconductor
Document Number: 88917
Revision: 18-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High Current Density Surface Mount
Glass-Passivated Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose, polarity protection, and rail-to-rail
protection in both consumer and automotive
applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3
suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1 A
V
RRM
100 V to 1000 V
I
R
1 µA
V
F
0.95 V
T
J
max. 150 °C
DO-220AA (SMP)
eSMP
TM
Series
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL S1PB S1PD S1PG S1PJ S1PK S1PM UNIT
Device marking code SB SD SG SJ SK SM
Maximum repetitive peak reverse voltage V
RRM
100 200 400 600 800 1000 V
Maximum RMS voltage V
RMS
70 140 280 420 560 700 V
Maximum DC blocking voltage V
DC
100 200 400 600 800 1000 V
Average forward current I
F(AV)
1.0 A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
I
FSM
30 A
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C
New Product
S1PB thru S1PM
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88917
Revision: 18-Apr-08
2
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Note:
(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0 mm copper pad areas. R
θJC
is measured
at the terminal of cathode band. R
θJC
is measured at the top centre of the body
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL S1PB S1PD S1PG S1PJ S1PK S1PM UNIT
Maximum instantaneous
forward voltage
(1)
I
F
= 1.0 A
I
F
= 1.0 A
T
J
= 25 °C
T
J
= 125 °C
V
F
1.1
0.95
V
Maximum reverse current
(1)
rated V
R
T
J
= 25 °C
T
J
= 125 °C
I
R
1.0
50
1.0
100
µA
Typical reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
1.8 µs
Typical junction capacitance time 4.0 V, 1 MHz C
J
6.0 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL S1PB S1PD S1PG S1PJ S1PK S1PM UNIT
Typical thermal resistance
(1)
R
θJA
R
θJL
R
θJC
105
15
20
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
S1PJ-E3/84A 0.024 84A 3000 7" diameter plastic tape and reel
S1PJ-E3/85A 0.024 85A 10000 13" diameter plastic tape and reel
S1PJHE3/84A
(1)
0.024 84A 3000 7" diameter plastic tape and reel
S1PJHE3/85A
(1)
0.024 85A 10000 13" diameter plastic tape and reel
Figure 1. Maximum Forward Current Derating Curve
0
1.2
80 90 100 110 120 130 140 150
Average Forward Rectified Current (A)
Lead Temperature (°C)
0.8
1.0
0.2
0.4
0.6
T
L
Measured
at the Cathode Band Terminal
Figure 2. Forward Power Loss Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0
1.21.0
0.8
0.60.4
0.2
0
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Average Forward Current
Average Power Loss (W)
D = t
p
/T t
p
T
New Product
S1PB thru S1PM
Vishay General Semiconductor
Document Number: 88917
Revision: 18-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Maximum Non-Repetitive Peak Forward Surge Current
Figure 4. Typical Instantaneous Forward Characteristics
Figure 5. Typical Reverse Leakage Characteristics
Peak Forward Surge Current (A)
Number of Cycles at 50 Hz
1
10
100
10
20
30
0
5
15
25
0.4 0.6 0.8 1.2 1.4
Instantaneous Forward Voltage (V)
0.1
10
1
100
Instantaneous Forward Current (A)
0.01
1.8 2.01.0 1.6
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
20 40 60 80 100
0.1
1
10
100
10 30 50 70 90
0.01
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Figure 6. Typical Junction Capacitance
Figure 7. Typical Transient Thermal Impedance
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 101 100
1
10
100
0.01 101 100
1
10
100
0.1
1000
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

S1PMHE3/85A

Mfr. #:
Buy S1PMHE3/85A
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers RECOMMENDED ALT 625-S1PMHM3/85A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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