ZX3CDBS1M832
ISSUE 3- OCTOBER 2007
2
PARAMETER SYMBOL VALUE UNIT
Transistor
Collector-Base Voltage V
CBO
40 V
Collector-Emitter Voltage V
CEO
20 V
Emitter-Base Voltage V
EBO
7.5 V
Peak Pulse Current I
CM
12 A
Continuous Collector Current (a)(f) I
C
4.5 A
Continuous Collector Current (b)(f) I
C
5A
Base Current I
B
1000 mA
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
P
D
1.5
12
W
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
P
D
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
P
D
1
8
W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
P
D
1.13
9
W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
P
D
1.7
13.6
W
mW/°C
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
P
D
3
24
W
mW/°C
Storage Temperature Range T
stg
-55 to +150 °C
Junction Temperature T
j
150 °C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(f) R
θJA
83 °C/W
Junction to Ambient (b)(f) R
θJA
51 °C/W
Junction to Ambient (c)(f) R
θJA
125 °C/W
Junction to Ambient (d)(f) R
θJA
111 °C/W
Junction to Ambient (d)(g) R
θJA
73.5 °C/W
Junction to Ambient (e)(g) R
θJA
41.7 °C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
