NVMFD5C466NLWFT1G

© Semiconductor Components Industries, LLC, 2017
August, 2017 − Rev. 3
1 Publication Order Number:
NVMFD5C466NL/D
NVMFD5C466NL
Power MOSFET
40 V, 7.4 mW, 52 A, Dual N−Channel
Features
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
NVMFD5C466NLWF Wettable Flank Option for Enhanced Optical
Inspection
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
40 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
JC
(Notes 1, 2, 3)
Steady
State
T
C
= 25°C
I
D
52
A
T
C
= 100°C 37
Power Dissipation
R
JC
(Notes 1, 2)
T
C
= 25°C
P
D
40
W
T
C
= 100°C 20
Continuous Drain
Current R
JA
(Notes 1, 2, 3)
Steady
State
T
A
= 25°C
I
D
14
A
T
A
= 100°C 10
Power Dissipation
R
JA
(Notes 1 & 2)
T
A
= 25°C
P
D
3.0
W
T
A
= 100°C 1.5
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 s
I
DM
177 A
Operating Junction and Storage Temperature T
J
, T
stg
55 to
+ 175
°C
Source Current (Body Diode) I
S
10 A
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, I
L(pk)
= 3 A)
E
AS
72 mJ
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State
R
JC
4
°C/W
Junction−to−Ambient − Steady State (Note 2)
R
JA
49
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
MARKING
DIAGRAM
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A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
40 V
7.4 m @ 10 V
52 A
12.6 m @ 4.5 V
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
D1
D1
D2
D2
S1
G1
S2
G2
Dual N−Channel
D1
S1
G1
XXXXXX
AYWZZ
D2
D1
D2
S2
G2
D2
D1
DFN8 5x6
(SO8FL)
CASE 506BT
1
NVMFD5C466NL
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
40 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
29
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25 °C 10
A
T
J
= 125°C 250
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= 20 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 30 A
1.2 2.2 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
−4.7 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V I
D
= 10 A 6.2 7.4
m
V
GS
= 4.5 V I
D
= 10 A 10 12.6
Forward Transconductance g
FS
V
DS
= 15 V, I
D
= 25 A 33 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 25 V
997
pF
Output Capacitance C
OSS
354
Reverse Transfer Capacitance C
RSS
13
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 32 V; I
D
= 25 A 7.0
nC
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 32 V; I
D
= 25 A 16
Threshold Gate Charge Q
G(TH)
V
GS
= 4.5 V, V
DS
= 32 V; I
D
= 25 A
1.5
Gate−to−Source Charge Q
GS
2.3
Gate−to−Drain Charge Q
GD
2.2
Plateau Voltage V
GP
3.3 V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 32 V,
I
D
= 25 A, R
G
= 1.0
10
ns
Rise Time t
r
67
Turn−Off Delay Time t
d(OFF)
26
Fall Time t
f
60
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C 0.9 1.2
V
T
J
= 125°C 0.7
Reverse Recovery Time t
RR
V
GS
= 0 V, dIS/dt = 100 A/s,
I
S
= 25 A
20
ns
Charge Time t
a
10
Discharge Time t
b
10
Reverse Recovery Charge Q
RR
8 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 s, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
NVMFD5C466NL
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3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1.51.00.50
0
10
30
40
20
60
70
64320
0
20
50
60
70
100
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
1098765
0
5
20
30252015 505
5
7
14
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.5
1.1
1.3
1.5
1.7
2.1
40302520105
1
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (m)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
V
GS
= 10 to 5 V
4.5 V
3.8 V
3.6 V
3.4 V
3.2 V
V
DS
= 10 V
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
10
15
25
I
D
= 10 A
T
J
= 25°C
4535
4
9
10
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
I
D
= 10 A
V
GS
= 10 V
T
J
= 125°C
T
J
= 150°C
T
J
= 25°C
15 35
10
100
1K
10K
100K
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (m)
90
43
175
1.9
3.02.52.0 51
0.9
0.7
150
50
80
40
30
10
40
6
8
11
T
J
= 85°C
0.6
1.2
1.4
1.6
1.8
2.0
1.0
0.8
10
12
13

NVMFD5C466NLWFT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET T6 40V LL S08FL DS
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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