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TSZL52C10 RWG

P1-P3P4-P6
- Wide zener voltage range selection : 2.4V to 39V
- Designed for mounting on small surface
- Extremely thin / leadless package
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: 1005
- Terminal: Gold plated, solderable per
MIL-STD-750, method 2026
- Polarity : Indicated by cathode band
- Weight : 0.006 g (approximately)
P
D
mW
V
F
V
T
J
, T
STG
o
C
Document Number: DS_S1412001 Version: D14
Small Signal Product
FEATURES
TSZL52C2V4 thru TSZL52C39
Taiwan Semiconductor
VALUE UNIT
SMD Zener Diode
Forward Voltage @ I
F
= 10mA
0.9
A
I
FSM
2
Forward Current, Surge Peak
8.3 ms Single Half Sine-Wave Superimposed on Rate Load
1005
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER SYMBOL
Junction and Storage Temperature Range -55 to +125
Power Dissipation 200
Small Signal Product
ELECTRICAL CHARACTERISTICS ( T
A
= 25
o
C unless otherwise noted )
Min Max
I
Z
(mA)
Max
I
Z
(mA)
Max
I
Z
(mA)
Max
V
R
(V)
TSZL52C2V4 Z2 2.28 2.52 5 85 5 600 1 100 1.0
TSZL52C2V7 Z3 2.57 2.84 5 83 5 500 1 75 1.0
TSZL52C3V0 Z4 2.85 3.15 5 95 5 500 1 50 1.0
TSZL52C3V3 Z5 3.14 3.47 5 95 5 500 1 25 1.0
TSZL52C3V6 Z6 3.42 3.78 5 95 5 500 1 15 1.0
TSZL52C3V9 Z7 3.71 4.10 5 95 5 500 1 10 1.0
TSZL52C4V3 Z8 4.09 4.52 5 95 5 500 1 5.0 1.0
TSZL52C4V7 Z9 4.47 4.94 5 78 5 500 1 5.0 2.0
TSZL52C5V1 ZA 4.85 5.36 5 60 5 480 1 0.1 0.8
TSZL52C5V6 ZB 5.32 5.88 5 40 5 400 1 0.1 1.0
TSZL52C6V2 ZC 5.89 6.51 5 10 5 200 1 0.1 2.0
TSZL52C6V8 ZE 6.46 7.14 5 8 5 150 1 0.1 3.0
TSZL52C7V5 ZF 7.13 7.88 5 7 5 50 1 0.1 5.0
TSZL52C8V2 ZG 7.79 8.61 5 7 5 50 1 0.1 6.0
TSZL52C9V1 ZH 8.65 9.56 5 10 5 50 1 0.1 7.0
TSZL52C10 ZJ 9.50 10.50 5 15 5 70 1 0.1 7.5
TSZL52C11 ZK 10.45 11.55 5 20 5 70 1 0.1 8.5
TSZL52C12 ZM 11.40 12.60 5 20 5 90 1 0.1 9.0
TSZL52C13 ZN 12.35 13.65 5 25 5 110 1 0.1 10
TSZL52C15 ZP 14.25 15.75 5 30 5 110 1 0.1 11
TSZL52C16 ZQ 15.20 16.80 5 40 5 170 1 0.1 12
TSZL52C18 ZR 17.10 18.90 5 50 5 170 1 0.1 14
TSZL52C20 ZS 19.00 21.00 5 50 5 220 1 0.1 15
TSZL52C22 ZT 20.90 23.10 5 55 5 220 1 0.1 17
TSZL52C24 ZU 22.80 25.20 5 80 5 220 1 0.1 18
TSZL52C27 ZV 25.65 28.35 5 80 5 250 1 0.1 20
TSZL52C30 ZW 28.50 31.50 5 80 5 250 1 0.1 23
TSZL52C33 ZX 31.35 34.65 5 80 5 250 1 0.1 25
TSZL52C36 ZY 34.20 37.80 5 90 5 250 1 0.1 27
TSZL52C39 ZZ 37.05 40.95 5 90 5 300 1 0.1 29
Document Number: DS_S1412001 Version: D14
Rising Operating Resistance
Z
ZK
(Ohm)
TSZL52C2V4 thru TSZL52C39
Taiwan Semiconductor
V
Z
(Volt)
Device
Device
Marking
Code
Reverse Current
I
R
(uA)
Zener Voltage
Z
ZT
(Ohm)
Operating Resistance
(TA=25℃ unless otherwise noted)
Document Number: DS_S1412001 Version: D14
Small Signal Product
TSZL52C2V4 thru TSZL52C39
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES
1
10
100
10 20 30 40 50
Temperature Coefficient (mV/
o
C)
Nomial Zener Voltage (V)
Fig. 2 Temperature Coefficient
T
A
=25
o
C
1
10
100
1000
1 10 100
Dynamic Impedance (Ohm)
Nomial Zener Voltage (V)
Fig. 3 Effect of Zener Voltage on Zener Impedance
0.00001
0.0001
0.001
0.01
0.1
1
10
100
0 5 10 15 20 25 30 35 40 45
Leakage Current (mA)
Nomial Zener Voltage (V)
Fig. 5 Typical Leakage Current
1
10
100
1000
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Forward Current (mA)
Forward Voltage (V)
Fig. 4 Typical Forward Voltage
-4
-3
-2
-1
0
1
2
3
4
5
6
7
23456789101112
Temperature Coefficient (mV/
o
C)
Nomial Zener Voltage (V)
Fig. 1 Temperature Coefficients
0
50
100
150
200
250
300
350
400
1 10 100
Capacitance (pF)
Normal Zener Voltage (V)
Fig. 6 Typical Capacitance
-55
o
C
T
A
=25
o
C
T
J
=25
o
C
I
Z
(AC)0.1 I
Z
(DC)
f=1kHZ
I
Z
=20mA
I
Z
=5mA
I
Z
=1mA
25
o
C
125
o
C
75
o
C
P1-P3P4-P6

TSZL52C10 RWG

Mfr. #:
Buy TSZL52C10 RWG
Manufacturer:
Taiwan Semiconductor
Description:
Zener Diodes Zener 200mW 10V
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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