IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT82N25P IXTQ82N25P
IXTK82N25P
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1 30 52 S
C
iss
4800 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 900 pF
C
rss
210 pF
t
d(on)
29 ns
t
r
20 ns
t
d(off)
78 ns
t
f
22 ns
Q
g(on)
142 nC
Q
gs
32 nC
Q
gd
74 nC
R
thJC
0.25 C/W
R
thCS
TO-3P 0.21 C/W
TO-264 0.15 C/W
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1 (External)
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
I
S
V
GS
= 0V, Note1 82 A
I
SM
Repetitive, pulse Width Limited by T
JM
328 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.4 V
t
rr
200 ns
Q
RM
2 C
I
F
= 25A, -di/dt = 100A/μs
V
R
= 100V
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
TO-3P Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
TO-264 AA Outline
TO-268 Outline
Terminals: 1 - Gate 2,4 - Drain
3 - Source
