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IRFIZ48N

P1-P3P4-P6P7-P9
IRFIZ48N
PRELIMINARY
HEXFET
®
Power MOSFET
PD 9.1407
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.016Ω
I
D
= 36A
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
TO-220 FULLPAK
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 3.6
R
θJA
Junction-to-Ambient ––– 65
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Description
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 36
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 25 A
I
DM
Pulsed Drain Current 210
P
D
@T
C
= 25°C Power Dissipation 42 W
Linear Derating Factor 0.28 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 270 mJ
I
AR
Avalanche Current 32 A
E
AR
Repetitive Avalanche Energy 4.2 mJ
dv/dt Peak Diode Recovery dv/dt 5.6 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
°C/W
IRFIZ48N
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.016 Ω V
GS
= 10V, I
D
= 22A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 22 ––– ––– S V
DS
= 25V, I
D
= 32A
––– ––– 25
µA
V
DS
= 55V, V
GS
= 0V
––– ––– 250 V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -20V
Q
g
Total Gate Charge ––– ––– 89 I
D
= 32A
Q
gs
Gate-to-Source Charge ––– ––– 20 nC V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 39 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 11 ––– V
DD
= 28V
t
r
Rise Time ––– 78 ––– I
D
= 32A
t
d(off)
Turn-Off Delay Time ––– 32 ––– R
G
= 5.1Ω
t
f
Fall Time ––– 48 ––– R
D
= 0.85Ω, See Fig. 10
Between lead,
––– –––
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 1900 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 620 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0MHz, See Fig. 5
C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance ––– –––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
pF
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 530µH
R
G
= 25Ω, I
AS
= 32A. (See Figure 12)
t=60s, ƒ=60Hz
I
SD
≤ 32A, di/dt ≤ 250A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Uses IRFZ48N data and test conditions
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 22A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 94 140 ns T
J
= 25°C, I
F
= 32A
Q
rr
Reverse RecoveryCharge ––– 360 540 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
S
D
G
36
210
A
IRFIZ48N
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics,
T
J
= 175
o
C
Fig 1. Typical Output Characteristics,
T
J
= 25
o
C
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs PULSE WIDTH
T = 25°C
C
A
4.5V
0.1
1
10
100
1000
0.1 1 10 100
4.5V
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs PULSE WIDTH
T = 175°C
C
A
0.1
1
10
100
1000
45678910
T = 25°C
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
T = 175°C
J
A
V = 25V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 53A
D
P1-P3P4-P6P7-P9

IRFIZ48N

Mfr. #:
Buy IRFIZ48N
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 55V 36A TO220FP
Lifecycle:
New from this manufacturer.
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