DN0150ALP4 / DN0150BLP4
Document number: DS31492 Rev. 7 - 2
May 2015
© Diodes Incorporated
Absolute Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Collector-Emitter Voltage
Collector Current – Continuous
Peak Pulse Collector Current
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage and Temperature Range
ESD Ratings (Note 8)
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
ON CHARACTERISTICS (Note 9)
Collector-Emitter Saturation Voltage
DC Current Gain DN0150ALP4
DN0150BLP4
SMALL SIGNAL CHARACTERISTICS
V
CE
= 10V, I
E
= -1mA
f = 30MHz
V
CB
= 10V, I
E
= 0,
f = 1MHz
Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
9. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.