VS-1N1199A

VS-1N1...A, VS-1N36..A Series
www.vishay.com
Vishay Semiconductors
Revision: 18-May-15
1
Document Number: 93493
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A
FEATURES
Voltage ratings from 50 V to 1000 V
High surge capability
Low thermal impedance
High temperature rating
Can be supplied as JAN and JAN-TX devices in
accordance with MIL-S-19500/260
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
JEDEC
®
registered values are in bold
ELECTRICAL SPECIFICATIONS
Notes
JEDEC registered values are in bold
Basic part number indicates cathode to case; for anode to case, add “R” to part number, e.g., 1N1199RA
PRODUCT SUMMARY
I
F(AV)
12 A
Package DO-203AA (DO-4)
Circuit configuration Single diode
DO-203AA (DO-4)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
F(AV)
12 A
T
C
150 °C
I
FSM
50 Hz 230
A
60 Hz 240
I
2
t
50 Hz 260
A
2
s
60 Hz 240
T
J
-65 to 200 °C
V
RRM
Range 50 to 1000 V
VOLTAGE RATINGS
TYPE NUMBER
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
(T
C
= -65 °C TO 200 °C)
V
V
R(RMS)
, MAXIMUM RMS
REVERSE VOLTAGE
(T
C
= -65 °C TO 200 °C)
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
(T
C
= -65 °C TO 200 °C)
V
V
RM
, MAXIMUM DIRECT
REVERSE VOLTAGE
(T
C
= -65 °C TO 200 °C)
V
VS-1N1199A 50 35 100 50
VS-1N1200A 100 70 200 100
VS-1N1201A 150 105 300 150
VS-1N1202A 200 140 350 200
VS-1N1203A 300 210 450 300
VS-1N1204A 400 280 600 400
VS-1N1205A 500 350 700 500
VS-1N1206A 600 420 800 600
VS-1N3670A 700 490 900 700
VS-1N3671A 800 560 1000 800
VS-1N3672A 900 630 1100 900
VS-1N3673A 1000 700 1200 1000
VS-1N1...A, VS-1N36..A Series
www.vishay.com
Vishay Semiconductors
Revision: 18-May-15
2
Document Number: 93493
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
JEDEC registered values are in bold
(1)
I
2
t for time t
x
= I
2
t x t
x
(2)
Maximum peak reverse current (I
RM
) under same conditions 2 x rated I
R(AV)
Note
JEDEC registered values are in bold
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature
I
F(AV)
180° sinusoidal conduction
12 A
150 °C
Maximum peak one cycle non-repetitive
surge current
I
FSM
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Following any rated load
condition and with rated
V
RRM
applied
230
A
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
240
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Following any rated load
condition and with V
RRM
applied following surge = 0 V
275
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
285
Maximum I
2
t for fusing
I
2
t
t = 10 ms With rated V
RRM
applied
following surge,
initial T
J
= 200 °C
260
A
2
s
t = 8.3 ms 240
Maximum I
2
t for individual
device fusing
t = 10 ms
With V
RRM
= 0 V following
surge, initial T
J
= 200 °C
370
t = 8.3 ms 340
Maximum I
2
t for individual
device fusing
I
2
t
(1)
t = 0.1 ms to 10 ms, V
RRM
= 0 V following surge 3715 A
2
s
Maximum forward voltage drop V
FM
I
F(AV)
= 12 A (38 A peak), T
C
= 25 °C 1.35 V
Maximum average
reverse current
V
RRM
= 50 V
I
R(AV)
(2)
Maximum rated I
F(AV)
and T
C
3.0
mA
V
RRM
= 100 V 2.5
V
RRM
= 150 V 2.25
V
RRM
= 200 V 2.0
V
RRM
= 300 V 1.75
V
RRM
= 400 V 1.5
V
RRM
= 500 V 1.25
V
RRM
= 600 V 1.0
V
RRM
= 700 V 0.9
V
RRM
= 800 V 0.8
V
RRM
= 900 V 0.7
V
RRM
= 1000 V 0.6
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating case and
storage temperature range
T
C
, T
Stg
-65 to 200 °C
Maximum internal thermal
resistance, junction to case
R
thJC
DC operation 2.0
°C/W
Thermal resistance,
case to sink
R
thCS
Mounting surface, smooth, flat and greased 0.5
Mounting torque
minimum
Torque applied to nut; non-lubricated threads
1.36 (12)
N · m
(lbf · in)
maximum 1.69 (15)
minimum
Torque applied to nut; lubricated threads
1.07 (9.45)
maximum 1.30 (11.55)
minimum
Torque applied to device case; lubricated threads
1.17 (10.35)
maximum 1.43 (12.65)
Approximate weight
7.0 g
0.25 oz.
Case style JEDEC DO-203AA (DO-4)
VS-1N1...A, VS-1N36..A Series
www.vishay.com
Vishay Semiconductors
Revision: 18-May-15
3
Document Number: 93493
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature
Fig. 2 - Maximum Low Level Forward Power Loss vs.
Average Forward Current
Fig. 3 - Maximum High Level Forward Power Loss vs.
Average Forward Current
Fig. 4 - Maximum Forward Voltage vs. Forward Current
Fig. 5 - Maximum Transient Thermal Impedance,
Junction to Case vs. Pulse Duration
Fig. 6 - Maximum Non-Repetitive 50 Hz Surge Current vs.
Number of Current Pulses
Maximum Allowable Case Temperature (°C)
Average
Forward Current Over Full Cycle (A)
+180 °C Wave
+180 °C Wave
+60 °C &
Wave
+120 °C &
Wave
DC
Conduction Period
0
0
2468 1210 14 1816 20
200
220
180
160
140
120
100
Average Forward Power Loss
Over Full Cycle (W)
Average
Forward Current Over Full Cycle (A)
TJ = 200°C
Conduction Period
0
0
24 6810
12
14
10
8
6
4
2
+180 °C Wave
+180 °C Wave
+120 °C & Wave
+60 °C & Wave
DC
Average Forward Power Loss
Over Full Cycle (W)
Average
Forward Current Over Full Cycle (A)
10
2
10
1.0
1.0 10
2
5
25
10
2
25
10
3
25
2
5
10
3
10
4
10
2
2
5
2
5
+180 °C Wave
+180 °C Wave
+120 °C & Wave
+120 °C & Wave
T
J
= 200°C
Conduction Period
DC
I
F
-
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
10
2
10
3
10
1.0
2
5
2
5
2
5
25 °C
T
J
= 200 °C
t
-
Square Wave Pulse Duration (s)
Z
thJC
-
Transient Thermal Impedance (°C/W)
1.0
10
10
-1
10
-2
2
5
25 25 25 25 25
2
5
2
5
1
1010
-1
10
-2
10
-3
10
-4
Steady State Value = 2.0 °C/W
Peak Half Sine Wave Forward Current (A)
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
2 4 6 8 10 20 40 6011
100
200
300
0
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge
60 Hz
50 Hz
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95311

VS-1N1199A

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 50 Volt 12 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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