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1SMA16CAT3

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 13
1 Publication Order Number:
1SMA10CAT3/D
1SMA10CAT3G Series,
SZ1SMA10CAT3G Series
400 Watt Peak Power Zener
Transient Voltage
Suppressors
Bidirectional
The SMA series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMA series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
SURMETIC
®
package and is ideally suited for use in
communication systems, automotive, numerical controls, process
controls, medical equipment, business machines, power supplies and
many other industrial/consumer applications.
Features
• Working Peak Reverse Voltage Range − 10 V to 78 V
• Standard Zener Breakdown Voltage Range − 11.7 V to 91.3 V
• Peak Power − 400 Watts @ 1 ms
• ESD Rating of Class 3 (> 16 kV) per Human Body Model
• Response Time is Typically < 1 ns
• Flat Handling Surface for Accurate Placement
• Package Design for Top Slide or Bottom Circuit Board Mounting
• Low Profile Package
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These are Pb−Free Devices*
Mechanical Characteristics:
CASE:
Void-free, transfer-molded plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode polarity notch does not indicate polarity
MOUNTING POSITION: Any
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
10−78 V V
R
400 W PEAK POWER
Device
**
Package
Shipping
†
ORDERING INFORMATION
SMA
CASE 403D
PLASTIC
MARKING DIAGRAM
www.onsemi.com
1SMAxxCAT3G SMA
(Pb−Free)
5,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
**The “T3” suffix refers to a 13 inch reel.
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 o
f
this data sheet.
DEVICE MARKING INFORMATION
xxC = Device Code (Refer to page 3)
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
xxC
AYWWG
SZ1SMAxxCAT3G SMA
(Pb−Free)
5,000 /
Tape & Reel
1SMA10CAT3G Series, SZ1SMA10CAT3G Series
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1) @ T
L
= 25°C, Pulse Width = 1 ms P
PK
400 W
DC Power Dissipation @ T
L
= 75°C Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
P
D
R
q
JL
1.5
20
50
W
mW/°C
°C/W
DC Power Dissipation (Note 3) @ T
A
= 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
P
D
R
q
JA
0.5
4.0
250
W
mW/°C
°C/W
Operating and Storage Temperature Range T
J
, T
stg
−65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. 10 X 1000 ms, non−repetitive.
2. 1 in square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
Bi−Directional TVS
I
PP
I
PP
V
I
I
R
I
T
I
T
I
R
V
RWM
V
C
V
BR
V
RWM
V
C
V
BR
1SMA10CAT3G Series, SZ1SMA10CAT3G Series
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS
Device*
Device
Marking
V
RWM
(Note 4)
I
R
@ V
RWM
Breakdown Voltage
V
C
@ I
PP
(Note 6)
C Typ.
(Note 7)
V
BR
(Volts) (Note 5) @ I
T
V
C
I
PP
Volts
mA
Min Nom Max mA
Volts Amps pF
1SMA10CAT3G QXC 10 2.5 11.1 11.69 12.27 1.0 17.0 23.5 580
1SMA12CAT3G REC 12 2.5 13.3 14.00 14.70 1.0 19.9 20.1 490
1SMA13CAT3G RGC 13 2.5 14.4 15.16 15.92 1.0 21.5 18.6 455
1SMA15CAT3G RMC 15 2.5 16.7 17.58 18.46 1.0 24.4 16.4 400
1SMA16CAT3G RPC 16 2.5 17.8 18.74 19.67 1.0 26.0 15.4 375
1SMA18CAT3G RTC 18 2.5 20 21.06 22.11 1.0 29.2 13.7 335
1SMA20CAT3G RVC 20 2.5 22.2 23.37 24.54 1.0 32.4 12.3 305
1SMA24CAT3G RZC 24 2.5 26.7 28.11 29.51 1.0 38.9 10.3 260
1SMA26CAT3G SEC 26 2.5 28.9 30.42 31.94 1.0 42.1 9.5 240
1SMA28CAT3G SGC 28 2.5 31.1 32.74 34.37 1.0 45.4 8.8 225
1SMA30CAT3G SKC 30 1.0 33.3 35.06 36.81 1.0 48.4 8.3 210
1SMA33CAT3G SMC 33 2.5 36.7 38.63 40.56 1.0 53.3 7.5 190
1SMA36CAT3G SPC 36 2.5 40 42.11 44.21 1.0 58.1 6.9 175
1SMA40CAT3G SRC 40 2.5 44.4 46.74 49.07 1.0 64.5 6.2 160
1SMA48CAT3G SXC 48 2.5 53.3 56.11 58.91 1.0 77.4 5.2 135
1SMA58CAT3G TGC 58 2.5 64.4 67.79 71.18 1.0 93.6 4.3 115
1SMA60CAT3G TKC 60 2.5 66.7 70.21 73.72 1.0 96.8 4.1 110
1SMA70CAT3G TPC 70 2.5 77.8 81.90 85.99 1.0 113 3.5 95
1SMA78CAT3G TTC 78 2.5 86.7 91.27 95.83 1.0 126 3.2 90
4. A transient suppressor is normally selected according to the working peak reverse voltage (V
RWM
), which should be equal to or greater than
the DC or continuous peak operating voltage level
5. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C
6. Surge current waveform per Figure 2 and derate per Figure 3
7. Bias voltage = 0 V, F = 1.0 MHz, T
J
= 25°C.
†Please see 1SMA5.0AT3 to 1SMA78AT3 for Unidirectional devices.
* Include SZ-prefix devices where applicable.
P1-P3P4-P5

1SMA16CAT3

Mfr. #:
Buy 1SMA16CAT3
Manufacturer:
ON Semiconductor
Description:
ESD Suppressors / TVS Diodes 16V 400W
Lifecycle:
New from this manufacturer.
Delivery:
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