VO4254, VO4256
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 13-Apr-12
4
Document Number: 84798
For technical questions, contact: optocoupleranswers@vishay.com
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 2 - Diode Forward Voltage vs. Forward Current
Fig. 3 - Diode Reverse Voltage vs. Temperature
Fig. 4 - Leakage Current vs. Ambient Temperature
Fig. 5 - On-State Current vs. On-State Voltage
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Climatic classification (according to IEC68 part 1) 55/100/21
Pollution degree (DIN VDE 0109) 2
Comparative tracking index per DIN IEC112/VDE 0303 part 1,
group IIIa per DIN VDE 6110 175 399
175 399
V
IOTM
V
IOTM
8000 V
V
IORM
V
IORM
890 V
P
SO
P
SO
500 mW
I
SI
I
SI
250 mA
T
SI
T
SI
175 °C
Creepage distance 7mm
Clearance distance 7mm
0.7
0.9
1.1
1.3
1.5
0.1 1.0 10.0
I
F
(mA)
V
F
(V)
32
34
36
38
40
42
- 60 - 40 - 20 0 20 40 60 80 100
Temperature (ºC)
V
R
(V)
1
10
100
1000
- 60 - 40 - 20 0 20 40 60 80 100
T
A
- Ambient Temperature (°C)
I
DRM
- Leakage Current (nA)
19682
I
DRM
at 630 V
I
TM
- On-State Current (mA)
V
TM
- On-State Voltage (V)
19683
