IXTH90P10P

IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXTT90P10P
IXTH90P10P
Fig. 7. Input Admittance
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-7.5-7.0-6.5-6.0-5.5-5.0-4.5-4.0-3.5
V
GS
- Volts
I
D
- Amperes
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
-110-100-90-80-70-60-50-40-30-20-100
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-240
-200
-160
-120
-80
-40
0
-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.5
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 102030405060708090100110120
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= - 50V
I
D
= - 45A
I
G
= -1mA
Fig. 11. Capacitance
100
1,000
10,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
1 10 100
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
R
DS(on)
Limit
-
-
- -
100ms
-
-
1ms
10ms
-
DC
© 2013 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_90P10P(B7) 5-13-08
IXTT90P10P
IXTH90P10P
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W

IXTH90P10P

Mfr. #:
Manufacturer:
Littelfuse
Description:
MOSFET -90.0 Amps -100V 25 mOhms
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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