SOT23 NPN SILICON PLANAR
HIGH FREQUENCY TRANSISTOR
ISSUE 3 - JANUARY 1996
FEATURES
* High f
T
=900MHz Min
* Max capacitance=1pF
* Low noise 4.5dB
PARTMARKING DETAIL - 179
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
20 V
Collector-Emitter Voltage V
CEO
12 V
Emitter-Base Voltage V
EBO
2.5 V
Continuous Collector Current I
C
50 mA
Power Dissipation P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Emitter Sustaining
Voltage
V
CEO(SUS)
12 V I
C
= 3mA, I
B
=0
Collector-Base Breakdown
Voltage
V
(BR)CBO
20 V
I
C
= 1µA, I
E
=0
Emitter-Base Breakdown
Voltage
V
(BR)EBO
2.5 V
I
E
=10µA, I
C
=0
Collector Cut-Off
Current
I
CBO
0.02
1.0
µA
µA
V
CB
=15V, I
E
=0
V
CB
=15V, I
E
=0, T
amb
=150°C
Static Forward Current
Transfer Ratio
h
FE
25 250 I
C
=3mA, V
CE
=1V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.4 V I
C
=10mA, I
B
=1mA
Base-Emitter
Saturation Voltage
V
BE(sat)
1.0 V I
C
=10mA, I
B
=1mA
Transition Frequency f
T
900 2000 MHz I
C
=5mA, V
CE
=6V, f=100MHz
Collector-Base Capacitance C
cb
1pFI
E
=0, V
CB
=10V, f=1MHz
Small Signal Current Gain h
fe
25 300 I
C
=2mA, V
CE
=6V, f=1KHz
Collector Base Time Constant rbC
c
314psI
E
=2mA, V
CB
=6V, f=31.9MHz
Noise Figure N
F
4.5 dB I
C
=1.5mA, V
CE
=6V
R
S
=50Ω, f=200MHz
Common-Emitter Amplifier
Power Gain
Gpe 15 dB I
C
=5mA, V
CE
=6V
f=200MHz
Spice parameter data is available upon request for this device
FMMT5179
FMMT5179
100
50
0
150
200
100
TYPICAL CHARACTERISTICS
h
FE
v I
C
I
C
-
(mA)
h
F
E
-G
a
in
V
B
E
-
(
V
olts)
V
CE
=1V
0.1 1 10
0.4
0.2
0
0.8
1.0
0.6
500
0
1500
1000
30
0
0.1 1 10
C
C
B
-
(p
F
)
VCB - (Volts)
1.2
C
CB
v V
CB
f
T
v I
C
V
CE
=6V
f=100MHz
175°C
100°C
25°C
-55°C
1000.1 1 10
V
CE
=1V
175°C
100°C
25°C
-55°C
f
T
-
(
M
Hz)
IC - (mA)
1000.1 1 10
I
C
-
(mA)
1.0
0.8
0.6
0.4
0.2
V
BE(on)
v I
C
I
E
=0
f=1MHz
C
B
E
SOT23
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