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BAS21E6327HTSA1

P1-P3P4-P6P7-P9
2007-04-19
1
BAS21...
Silicon Switching Diode
• For high-speed switching applications
• High breakdown voltage
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
BAS21 BAS21-03W BAS21U
!
,
!
"
#$
, , !
Type Package Configuration Marking
BAS21
BAS21-03W
BAS21U
SOT23
SOD323
SC74
single
single
parallel triple
JSs
D
JSs
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Value Unit
Diode reverse voltage V
R
200 V
Peak reverse voltage V
RM
250
Forward current I
F
250 mA
Peak forward current I
FM
625
Peak forward current I
FM
625 mA
Surge forward current, t = 10 µs I
FS
4 A
Non-repetitive peak surge forward current I
FSM
-
Total power dissipation
BAS21, T
S
≤ 70°C
BAS21-03W, T
S
≤ 124°C
BAS21U, T
S
≤ 122°C
P
tot
350
250
250
mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
1
Pb-containing package may be available upon special request
2007-04-19
2
BAS21...
Thermal Resistance
Parameter
Symbol Value Unit
Junction - soldering point
1)
BAS21
BAS21-03W
BAS21U
R
thJS
≤ 230
≤ 105
≤ 110
K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I
(BR)
= 100 µA
V
(BR)
250 - - V
Reverse current
V
R
= 200 V
V
R
= 200 V, T
A
= 150 °C
I
R
-
-
-
-
0.1
100
µA
Forward voltage
I
F
= 100 mA
I
F
= 200 mA
V
F
-
-
-
-
1
1.25
V
AC Characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
- - 5 pF
Reverse recovery time
I
F
= 30 mA, I
R
= 30 mA, measured at I
R
= 3mA,
R
L
= 100 Ω
t
rr
- - 50 ns
Test circuit for reverse recovery time
EHN00018
Oscillograph
Ι
F
D.U.T.
Puls generator: t
p
= 1µs, D = 0.05
t
r
= 0.6ns, R
i
= 50Ω
Oscillograph: R = 50Ω , t
r
= 0.35ns, C ≤ 1pF
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2007-04-19
3
BAS21...
Reverse current I
R
= ƒ (T
A
)
V
R
= 200V
10
0 50 100 150
BAS 19...21 EHB00027
µ
T
A
Ι
R
˚C
0
-2
5
5
5
max
typ.
A
10
-1
10
10
1
10
2
Forward Voltage V
F
= ƒ (T
A
)
I
F
= Parameter
0.0
0
BAS 19...21 EHB00029
T
A
V
F
˚C
0.5
1.0
V
1.5
50 100 150
F
Ι
= 625 mA
mA250
100
mA
10 mA
Forward current I
F
= ƒ (V
F
)
0.0
0
EHB00028BAS 19...21
Ι
V
F
F
100
200
300
400
500
600
700
mA
800
0.5 1.0 V 1.5
Forward current I
F
= ƒ (T
S
)
BAS21-03W
0 15 30 45 60 75 90 105 120
°C
150
T
S
0
50
100
150
200
mA
300
I
F
P1-P3P4-P6P7-P9

BAS21E6327HTSA1

Mfr. #:
Buy BAS21E6327HTSA1
Manufacturer:
Infineon Technologies
Description:
Diodes - General Purpose, Power, Switching AF DIODE 250V 0.25A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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