© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_150N17T(8W)12-02-08-A
IXFH150N17T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
21
22
23
24
25
26
27
28
29
30
31
35 40 45 50 55 60 65 70 75 80 85 90 95 100
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 2
V
GS
= 10V
V
DS
= 85V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
15
20
25
30
35
40
45
50
2345678910
R
G
- Ohms
t
r
- Nanoseconds
20
22
24
26
28
30
32
34
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 85V
I
D
= 37A, 75A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
20
22
24
26
28
30
32
34
36
38
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
50
55
60
65
70
75
80
85
90
95
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2, V
GS
= 10V
V
DS
= 85V
I
D
= 37A
I
D
= 75A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
20
22
24
26
28
30
32
34
36
38
35 40 45 50 55 60 65 70 75 80 85 90 95 100
I
D
- Amperes
t
f
- Nanoseconds
50
55
60
65
70
75
80
85
90
95
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2, V
GS
= 10V
V
DS
= 85V
T
J
= 125ºC
T
J
= 25ºC
T
J
= 25ºC
T
J
= 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
20
21
22
23
24
25
26
27
28
29
30
31
32
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 2
V
GS
= 10V
V
DS
= 85V
I
D
= 75A
I
D
= 37A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
20
30
40
50
60
70
80
90
100
110
2345678910
R
G
- Ohms
t
f
- Nanoseconds
60
80
100
120
140
160
180
200
220
240
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 85V
I
D
= 75A
I
D
= 37A
