OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

DMN62D0LFD-7

P1-P3P4-P6
DMN62D0LFD
Document number: DS36359 Rev. 2 - 2
1 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMN62D0LFD
ADVANCE INFORMATION
NEW PRODUCT
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
60V
2 @ V
GS
= 4V
310mA
2.5 @ V
GS
= 2.5V
295mA
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• DC-DC Converters
• Power management functions
• Battery Operated Systems and Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X1-DFN1212-3
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: NiPdAu over Copper leadframe. Solderable per MIL-
STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.005 grams (approximate)
Ordering Information (Note 4)
Part Number Compliance Case Packaging
DMN62D0LFD-7 Standard X1-DFN1212-3 3,000/Tape & Reel
DMN62D0LFD-13 Standard X1-DFN1212-3 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
Bottom View
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Equivalent Circuit
ESD PROTECTED
K63 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2013)
M = Month (ex: 9 = September)
G pin
K63
YM
Pin-Out Top View
D
S
G
e4
DMN62D0LFD
Document number: DS36359 Rev. 2 - 2
2 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMN62D0LFD
ADVANCE INFORMATION
NEW PRODUCT
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 4.0V
T
A
= +25°C
T
A
= +70°C
I
D
310
260
mA
Pulsed Drain Current (Note 6) (10µs pulse, duty cycle = 1%)
I
DM
1.0 A
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 5)
P
D
0.48 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5) R
JA
265 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60
—
— V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— —
1.0 A
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= ±5V, V
DS
= 0V
— —
±500 nA
V
GS
= ±10V, V
DS
= 0V
— —
±2.0 A
V
GS
= ±15V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.6 — 1.0 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS(ON)
—
1.3 2
V
GS
= 4V, I
D
= 100mA
—
1.4 2.5
V
GS
= 2.5V, I
D
= 50mA
—
1.8 3
V
GS
= 1.8V, I
D
= 50mA
—
2.4
—
V
GS
= 1.5V, I
D
= 10mA
Forward Transfer Admittance
|Y
fs
|
—
1.8
—
S
V
DS
= 10V, I
D
= 200mA
Diode Forward Voltage
V
SD
—
0.8 1.3 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
31
—
pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
4.3
—
Reverse Transfer Capacitance
C
rss
—
3.0
—
Gate Resistance
R
g
—
99
—
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
—
0.5
—
nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
Q
gs
—
0.09
—
Gate-Drain Charge
Q
gd
—
0.07
—
Turn-On Delay Time
t
D(on)
—
2.6
—
ns
V
GS
= 10V, V
DS
= 30V,
R
L
= 150, R
G
= 25,
I
D
= 200mA
Turn-On Rise Time
t
r
—
2.1
—
ns
Turn-Off Delay Time
t
D(off)
—
18
—
ns
Turn-Off Fall Time
t
f
—
8.7
—
ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN62D0LFD
Document number: DS36359 Rev. 2 - 2
3 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMN62D0LFD
ADVANCE INFORMATION
NEW PRODUCT
NEW PRODUCT
0 0.5 1.0 1.5 2.0 2.5 3.0
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0.0
0.1
0.2
0.3
0.4
0.5
V= 1.2V
GS
V= 1.5V
GS
V= 2.0V
GS
V= 2.5V
GS
V= 3.5V
GS
V= 4.0V
GS
V= 4.5V
GS
V = 10V
GS
V= 3.0V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0.1
0.2
0.3
0.4
0.5
1.5 2.0 2.500.51.0
0
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
0 0.1 0.2 0.3 0.4 0.5
V = 2.5V
GS
V = 4.5V
GS
V = 10V
GS
3.0
I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0 0.1 0.2 0.3 0.4 0.5
2.5
2.0
1.5
1.0
0.5
0
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V= 4.5V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
J
°
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
2.4
2.0
1.6
1.2
0.8
0.4
V=.5V
I = 100mA
GS
D
2
V=V
I = 200mA
GS
D
4
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
V=.5V
I = 100mA
GS
D
2
V=V
I = 200mA
GS
D
4
0.5
1.0
1.5
2.0
2.5
3.0
P1-P3P4-P6

DMN62D0LFD-7

Mfr. #:
Buy DMN62D0LFD-7
Manufacturer:
Description:
Trans MOSFET N-CH 60V 0.31A Automotive 3-Pin X1-DFN EP T/R
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet