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TSM4N80CZ C0G

P1-P3P4-P6P7-P9
TSM4N80
Taiwan Semiconductor
Document Number: DS_P0000108 4 Version: D15
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
TSM4N80
Taiwan Semiconductor
Document Number: DS_P0000108 5 Version: D15
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Drain Current vs. Case Temperature
BV
DSS
vs. Junction Temperature
Maximum Safe Operating Area (TO-220)
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area (ITO-220)
TSM4N80
Taiwan Semiconductor
Document Number: DS_P0000108 6 Version: D15
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-220)
Normalized Thermal Transient Impedance, Junction-to-Ambient (ITO-220)
P1-P3P4-P6P7-P9

TSM4N80CZ C0G

Mfr. #:
Buy TSM4N80CZ C0G
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET 800V 4Amp N channel Mosfet
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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