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DG213DJ-E3

P1-P3P4-P6P7-P9P10-P12P13-P14
www.vishay.com
4
Document Number: 70662
S-80263-Rev. G, 11-Feb-08
Vishay Siliconix
DG213
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS for Unipolar Supply
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V, V
L
= 5 V,
V
IN
= 2.4 V, 0.8 V
e
Temp.
a
D Suffix
- 40 °C to 85 °C
Unit Min.
c
Typ.
b
Max.
c
Analog Switch
Analog Signal Range
d
V
ANALOG
Full V- V+ V
Drain-Source On-Resistance
r
DS(on)
V
D
= 3 V, I
S
= 1 mA
Room
Full
90 110
140
Ω
Dynamic Characteristics
Tur n -On Ti m e
t
ON
See Figure 2
Room
125 200
nsTurn-Off Time
t
OFF
Room
45 100
Break-Before-Make Time Delay
t
D
V
S
= 8 V, See Figure 3 Room
50 80
Charge Injection
QC
L
= 1 nF, V
gen
= 6 V, R
gen
= 0 Ω Room
4
pC
Power Supply
Positive Supply Current I+
V
IN
= 0 or 5 V
Room
Full
1
5
µANegative Supply Current I-
Room
Full
- 1
- 5
Logic Supply Current
I
L
Room
Full
1
5
Power Supply Range for
Continuous Operation
V
OP
Full + 3 + 40 V
Document Number: 70662
S-80263-Rev. G, 11-Feb-08
www.vishay.com
5
Vishay Siliconix
DG213
TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
r
DS(on)
vs. V
D
and Power Supply Voltages
r
DS(on)
vs. V
D
and Single Power Supply Voltages
Leakage Current vs. Temperature
- 20 - 16 - 12 - 8 - 4 0 4 8 1 2 1 6 2 0
40
50
60
70
80
90
100
11 0
± 5 V
V
D
- Drain V oltage (V)
± 10 V
± 15 V
± 20 V
30
20
10
r
DS(on)
- Drain-Source On-Resistance (Ω)
0
50
100
150
200
250
300
02468 1 0 12
V
D
- Drain V oltage (V)
5 V
7 V
10 V
12 V
r
DS(on)
- Drain-Source On-Resistance (Ω)
V- = 0 V
V
L
= 5 V
- 55 25 455- 15 65
1 nA
100 pA
10 pA
- 35
1 pA
85 105 125
V+ = 15 V
V- = - 15 V
V
S,
V
D
= ± 14 V
I
S(off)
, I
D(off)
I
S,
I
D
- Current
Temperature (°C)
r
DS(on)
vs. V
D
and Temperature
Leakage Currents vs. Analog Voltage
Q
S
, Q
D
- Charge Injection vs. Analog Voltage
85 °C
0
10
20
30
40
50
- 15 - 10 - 5 0 5 10 15
V
D
- Drain Voltage (V)
125 °C
25 °C
- 55 °C
V+ = 15 V
V- = ± 15 V
60
70
80
90
100
r
DS(on)
- Drain-Source On-Resistance (Ω)
- 20 - 15 - 10 - 5 0 5 10 15 20
40
20
0
- 20
- 40
I
S,
I
D
- Current (pA)
I
S(off)
, I
D(off)
I
D(on)
V
ANALOG
- Analog V oltage (V)
V+ = 22 V
V- = - 22 V
T
A
= 25 °C
30
10
- 10
- 30
- 15 - 10 - 5 0 5 10 15
30
20
10
0
- 10
- 20
- 30
V+ = 15 V
V- = - 15 V
V+ = 12 V
V- = 0 V
Q - Charge (pC)
V
ANALOG
- Analog V oltage (V)
www.vishay.com
6
Document Number: 70662
S-80263-Rev. G, 11-Feb-08
Vishay Siliconix
DG213
TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
SCHEMATIC DIAGRAM Typical Channel
TEST CIRCUITS
Off Isolation vs. Frequency
OIRR (dB)
10 k 100 k 1 M 10 M
40
50
60
70
80
90
100
110
120
f - Frequency (Hz)
V+ = + 15 V
V- = - 15 V
R
L
= 50 Ω
Figure 1.
D
X
S
X
V+
IN
X
V–
Level
Shift/
GND
V+
V–
Drive
V
L
Figure 2. Switching Time
50 %
0 V
3 V
t
OFF
t
ON
V
O
t
r
< 20 ns
t
f
< 20 ns
Logic
Input
Switch
Output
90 %
C
L
35 pF
R
L
300 Ω
V
O
= V
S
R
L
+ r
DS(on)
R
L
V
S
= + 2 V
V
O
V-
V+
IN
S
D
3 V
- 15 V
GND
+ 15 V
P1-P3P4-P6P7-P9P10-P12P13-P14

DG213DJ-E3

Mfr. #:
Buy DG213DJ-E3
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs 2NO + 2NC ANALOG SWITCH
Lifecycle:
New from this manufacturer.
Delivery:
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