Vishay Siliconix
DG213
Document Number: 70662
S-80263-Rev. G, 11-Feb-08
www.vishay.com
1
Quad Complementary CMOS Analog Switch
FEATURES
± 22 V supply voltage rating
TTL and CMOS compatible logic
Low on-resistance - r
DS(on)
: 45 Ω
Low leakage - I
D(on)
: 20 pA
Single supply operation possible
Extended temperature range
Fast switching - t
ON
: 85 ns
BENEFITS
Low charge injection - Q: 1 pC
Wide analog signal range
Simple logic interface
Higher accuracy
Minimum transients
Reduced power consumption
Low cost
APPLICATIONS
Industrial instrumentation
Test equipment
Communications systems
Computer peripherals
Portable instruments
Sample-and-hold circuits
DESCRIPTION
The versatile DG213 analog switch has two NC and two NO
switches. It can be used in various configurations, including
four single-pole single-throw (SPST), two single-pole
double-throw (SPDT), one “T” switch, one DPDT, etc. This
device is fabricated in a Vishay Siliconix’ proprietary high-
voltage silicon gate CMOS process, resulting in lower on-
resistance, lower leakage, higher speed, and lower power
consumption.
This analog switch was designed for a wide variety of
general purpose applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design
minimizes switching transients. These switches can handle
up to ± 22 V, and have an improved continuous current
rating of 30 mA. An epitaxial layer prevents latchup.
All switches feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
For additional information, please refer to Application Note
AN208 (FaxBack document #70606).
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic "0" 0.8 V
Logic "1" 2.4 V
* Pb containing terminations are not RoHS compliant, exemptions may apply.
IN
1
IN
2
D
1
D
2
S
1
S
2
V- V+
GND V
L
S
4
S
3
D
4
D
3
IN
4
IN
3
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top View
TRUTH TABLE
Logic
SW
1
, SW
4
SW
2
, SW
3
0 OFF ON
1ONOFF
Available
Pb-free
RoHS*
COMPLIANT
www.vishay.com
2
Document Number: 70662
S-80263-Rev. G, 11-Feb-08
Vishay Siliconix
DG213
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
ORDERING INFORMATION
Temp. Range Package Standard Part Number Lead (Pb)-free Part Number
- 40 °C to 85 °C
16-Pin Plastic DIP DG213DJ DG213DJ-E3
16-Pin Narrow SOIC
DG213DY
DG213DY-T1
DG213DY-E3
DG213DY-T1-E3
16-Pin TSSOP
DG213DQ
DG213DQ-T1
DG213DQ-E3
DG213DQ-T1-E3
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Limit Unit
Voltages Referenced V+ to V- 44
V
GND 25
Digital Inputs
a
V
S
, V
D
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
Current, Any Terminal 30
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle max.) 100
Storage Temperature - 65 to 125 °C
Power Dissipation
b
16-Pin Plastic DIP
c
470
mW
16-Pin Narrow SOIC
d
640
16-Pin TSSOP
d
500
Document Number: 70662
S-80263-Rev. G, 11-Feb-08
www.vishay.com
3
Vishay Siliconix
DG213
SPECIFICATIONS
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V, V
L
= 5 V,
V
IN
= 2.4 V, 0.8 V
e
Temp.
a
D Suffix
- 40 °C to 85 °C
Unit Min.
c
Typ.
b
Max.
c
Analog Switch
Analog Signal Range
d
V
ANALOG
Full V- V+ V
Drain-Source On-Resistance
r
DS(on)
V
D
= ± 10 V, I
S
= 1 mA
Room
Full
45 60
85
Ω
r
DS(on)
Match Δr
DS(on)
Room
1
2
Source Off Leakage Current
I
S(off)
V
S
= ± 14 V, V
D
= ± 14 V
Room
Full
- 0.5
- 5
± 0.01 0.5
5
nADrain Off Leakage Current
I
D(off)
V
D
= ± 14 V, V
S
= ± 14 V
Room
Full
- 0.5
- 5
± 0.01 0.5
5
Drain On Leakage Current
f
I
D(on)
V
S
= V
D
= 14 V
Room
Full
- 0.5
- 10
± 0.02 0.5
10
Digital Control
Input Voltage High
V
INH
Full 2.4
V
Input Voltage Low
V
INL
Full 0.8
Input Current
I
INL
or I
INH
V
INH
or V
INL
Full - 1 1 µA
Input Capacitance
C
IN
Room
5
pF
Dynamic Characteristics
Tu r n - On T im e
t
ON
V
S
= 10 V
See Figure 2
Room
85 130
nsTurn-Off Time
t
OFF
Room
55 100
Break-Before-Make Time Delay
t
D
V
S
= 10 V, See Figure 3 Room
15 25
Charge Injection
QC
L
= 1000 pF, V
g
= 0 V, R
g
= 0 Ω Room
1
pC
Source-Off Capacitance
C
S(off)
V
S
= 0 V, f = 1 MHz
Room
5
pFDrain-Off Capacitance
C
D(off)
Room
5
Channel On Capacitance
C
D(on)
V
D
= V
S
= 0 V, f = 1 MHz Room
16
Off-Isolation
OIRR
C
L
= 15 pF, R
L
= 50 Ω
V
S
= 1 V
RMS
, f = 100 kHz
Room
90
dB
Channel-to-Channel Crosstalk
X
TA LK
Room
95
Power Supply
Positive Supply Current I+
V
IN
= 0 or 5 V
Room
Full
1
5
µANegative Supply Current I-
Room
Full
- 1
- 5
Logic Supply Current
I
L
Room
Full
1
5
Power Supply Range for
Continuous Operation
V
OP
Full ± 3 ± 22 V

DG213DY-T1-E3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs Quad SPST 22/40V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet