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MUBW35-12E7

P1-P3P4-P6P7-P8
4 - 8© 2007 IXYS All rights reserved
MUBW 35-12 E7
20070912a
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
R
25
T = 25°C 4.75 5.0 5.25 kΩ
B
25/50
3375 K
Module
Symbol Conditions Maximum Ratings
T
VJ
-40...+125 °C
T
JM
150 °C
T
stg
-40...+125 °C
V
ISOL
I
ISOL
= 1 mA; 50/60 Hz 2500 V~
M
d
Mounting torque (M5) 2.7 - 3.3 Nm
Symbol Conditions Characteristic Values
min. typ. max.
R
pin-chip
5mΩ
d
S
Creepage distance on surface 6 mm
d
A
Strike distance in air 6 mm
R
thCH
with heatsink compound 0.02 K/W
Weight 180 g
Dimensions in mm (1 mm = 0.0394")
p h a s e - o u t
5 - 8© 2007 IXYS All rights reserved
MUBW 35-12 E7
20070912a
Fig. 4 Power dissipation versus direct output current and ambient temperature, sin 180°
Fig. 5 Max. forward current versus
case temperature
Fig. 6 Transient thermal impedance junction to case
Fig. 1 Forward current versus voltage
drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Input Rectifier Bridge D11 - D16
0.001 0.01 0.1 1
0
50
100
150
200
23456789110
10
2
10
3
0.0 0.6 1.2 1.8 2.4
0
20
40
60
80
100
120
0 40 80 120
0
50
100
150
200
250
300
350
0 20406080100120140
0.001 0.01 0.1 1 10
0.0
0.4
0.8
1.2
I
2
t
I
FSM
I
F
A
V
F
t
s
t
ms
P
tot
W
I
d(AV)M
A
T
amb
t
s
K/W
A
2
s
0 20 40 60 80 100 120 140
0
10
20
30
40
50
60
70
80
I
d(AV)
T
C
A
V
A
CC
Z
thJC
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 45°C
T
VJ
= 150°C
50Hz, 80% V
RRM
T
VJ
= 45°C
T
VJ
= 150°C
R
thA
:
0.05 K/W
0.15 K/W
0.3 K/W
0.5 K/W
1 K/W
2 K/W
5 K/W
DWN 17
p h a s e - o u t
6 - 8© 2007 IXYS All rights reserved
MUBW 35-12 E7
20070912a
Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics
Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics of
free wheeling diode
Fig. 11 Typ. turn on gate charge Fig. 12 Typ. transient thermal impedance
Output Inverter T1 - T6 / D1 - D6
01234567
0
20
40
60
80
100
120
0 40 80 120 160 200
0
5
10
15
20
01234567
0
20
40
60
80
100
120
V
CE
V
I
C
V
CE
A
I
C
V
nC
Q
G
V
V
GE
9 V
11 V
9 V
11 V
A
4 6 8 10 12 14 16
0
20
40
60
80
100
120
V
V
GE
A
I
C
01234
0
15
30
45
60
75
90
V
V
F
I
F
A
0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
10
single pulse
t
s
K/W
Z
thJC
IGBT
diode
MUBW3512E7
13 V
15 V
T
VJ
= 25°C
V
GE
= 17 V
15 V
13 V
T
VJ
= 125°C
V
GE
= 17 V
T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 20 V
T
VJ
= 125°C
T
VJ
= 25°C
V
CE
= 600 V
I
C
= 35 A
p h a s e - o u t
P1-P3P4-P6P7-P8

MUBW35-12E7

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Description:
MODULE IGBT CBI E2
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New from this manufacturer.
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