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AT45DB161B
2224G–DFLSH–5/03
MAIN MEMORY PAGE PROGRAM THROUGH BUFFER: This operation is a combina-
tion of the Buffer Write and Buffer to Main Memory Page Program with Built-in Erase
operations. Data is first shifted into buffer 1 or buffer 2 from the SI pin and then pro-
grammed into a specified page in the main memory. To initiate the operation, an 8-bit
opcode, 82H for buffer 1 or 85H for buffer 2, must be followed by the two reserved bits
and 22 address bits. The 12 most significant address bits (PA11 - PA0) select the page
in the main memory where data is to be written, and the next ten address bits
(BFA9 - BFA0) select the first byte in the buffer to be written. After all address bits are
shifted in, the part will take data from the SI pin and store it in one of the data buffers. If
the end of the buffer is reached, the device will wrap around back to the beginning of the
buffer. When there is a low-to-high transition on the CS
pin, the part will first erase the
selected page in main memory to all 1s and then program the data stored in the buffer
into the specified page in the main memory. Both the erase and the programming of the
page are internally self-timed and should take place in a maximum of time t
EP
. During
this time, the status register will indicate that the part is busy.
Additional Commands MAIN MEMORY PAGE TO BUFFER TRANSFER: A page of data can be transferred
from the main memory to either buffer 1 or buffer 2. To start the operation, an 8-bit
opcode, 53H for buffer 1 and 55H for buffer 2, must be followed by the two reserved bits,
12 address bits (PA11 - PA0) which specify the page in main memory that is to be trans-
ferred, and ten don’t care bits. The CS
pin must be low while toggling the SCK pin to
load the opcode, the address bits, and the don’t care bits from the SI pin. The transfer of
the page of data from the main memory to the buffer will begin when the CS
pin transi-
tions from a low to a high state. During the transfer of a page of data (t
XFR
), the status
register can be read to determine whether the transfer has been completed or not.
MAIN MEMORY PAGE TO BUFFER COMPARE: A page of data in main memory can
be compared to the data in buffer 1 or buffer 2. To initiate the operation, an 8-bit opcode,
60H for buffer 1 and 61H for buffer 2, must be followed by 24 address bits consisting of
the two reserved bits, 12 address bits (PA11 - PA0) which specify the page in the main
memory that is to be compared to the buffer, and ten don’t care bits. The CS
pin must be
low while toggling the SCK pin to load the opcode, the address bits, and the don’t care
bits from the SI pin. On the low-to-high transition of the CS
pin, the 528 bytes in the
selected main memory page will be compared with the 528 bytes in buffer 1 or buffer 2.
During this time (t
XFR
), the status register will indicate that the part is busy. On comple-
tion of the compare operation, bit 6 of the status register is updated with the result of the
compare.
AUTO PAGE REWRITE: This mode is only needed if multiple bytes within a page or
multiple pages of data are modified in a random fashion. This mode is a combination of
two operations: Main Memory Page to Buffer Transfer and Buffer to Main Memory Page
Program with Built-in Erase. A page of data is first transferred from the main memory to
buffer 1 or buffer 2, and then the same data (from buffer 1 or buffer 2) is programmed
back into its original page of main memory. To start the rewrite operation, an 8-bit
opcode, 58H for buffer 1 or 59H for buffer 2, must be followed by the two reserved bits,
12 address bits (PA11 - PA0) that specify the page in main memory to be rewritten, and
ten additional dont care bits. When a low-to-high transition occurs on the CS
pin, the
part will first transfer data from the page in main memory to a buffer and then program
the data from the buffer back into same page of main memory. The operation is inter-
nally self-timed and should take place in a maximum time of t
EP
. During this time, the
status register will indicate that the part is busy.
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AT45DB161B
2224G–DFLSH–5/03
If a sector is programmed or reprogrammed sequentially page-by-page, then the pro-
gramming algorithm shown in Figure 1 on page 26 is recommended. Otherwise, if
multiple bytes in a page or several pages are programmed randomly in a sector, then
the programming algorithm shown in Figure 2 on page 27 is recommended. Each page
within a sector must be updated/rewritten at least once within every 10,000 cumulative
page erase/program operations in that sector.
Operation Mode
Summary
The modes described can be separated into two groups – modes which make use of the
Flash memory array (Group A) and modes which do not make use of the Flash memory
array (Group B).
Group A modes consist of:
1. Main Memory Page Read
2. Main Memory Page to Buffer 1 (or 2) Transfer
3. Main Memory Page to Buffer 1 (or 2) Compare
4. Buffer 1 (or 2) to Main Memory Page Program with Built-in Erase
5. Buffer 1 (or 2) to Main Memory Page Program without Built-in Erase
6. Page Erase
7. Block Erase
8. Main Memory Page Program through Buffer
9. Auto Page Rewrite
Group B modes consist of:
1. Buffer 1 (or 2) Read
2. Buffer 1 (or 2) Write
3. Status Register Read
If a Group A mode is in progress (not fully completed) then another mode in Group A
should not be started. However, during this time in which a Group A mode is in
progress, modes in Group B can be started.
This gives the Serial DataFlash the ability to virtually accommodate a continuous data
stream. While data is being programmed into main memory from buffer 1, data can be
loaded into buffer 2 (or vice versa). See application note AN-4 (“Using Atmel’s Serial
DataFlash”) for more details.
Pin Descriptions SERIAL INPUT (SI): The SI pin is an input-only pin and is used to shift data into the
device. The SI pin is used for all data input including opcodes and address sequences.
SERIAL OUTPUT (SO): The SO pin is an output-only pin and is used to shift data out
from the device.
SERIAL CLOCK (SCK): The SCK pin is an input-only pin and is used to control the flow
of data to and from the DataFlash. Data is always clocked into the device on the rising
edge of SCK and clocked out of the device on the falling edge of SCK.
CHIP SELECT (CS
): The DataFlash is selected when the CS pin is low. When the
device is not selected, data will not be accepted on the SI pin, and the SO pin will
remain in a high-impedance state. A high-to-low transition on the CS
pin is required to
start an operation, and a low-to-high transition on the CS
pin is required to end an
operation.
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AT45DB161B
2224G–DFLSH–5/03
WRITE PROTECT: If the WP pin is held low, the first 256 pages of the main memory
cannot be reprogrammed. The only way to reprogram the first 256 pages is to first drive
the protect pin high and then use the program commands previously mentioned. If this
pin and feature are not utilized it is recommended that the WP
pin be driven high
externally.
RESET
: A low state on the reset pin (RESET) will terminate the operation in progress
and reset the internal state machine to an idle state. The device will remain in the reset
condition as long as a low level is present on the RESET
pin. Normal operation can
resume once the RESET
pin is brought back to a high level.
The device incorporates an internal power-on reset circuit, so there are no restrictions
on the RESET
pin during power-on sequences. If this pin and feature are not utilized it is
recommended that the RESET
pin be driven high externally.
READY/BUSY
: This open drain output pin will be driven low when the device is busy in
an internally self-timed operation. This pin, which is normally in a high state (through
a1k external pull-up resistor), will be pulled low during programming operations, com-
pare operations, and during page-to-buffer transfers.
The busy status indicates that the Flash memory array and one of the buffers cannot be
accessed; read and write operations to the other buffer can still be performed.
Power-on/Reset State When power is first applied to the device, or when recovering from a reset condition, the
device will default to SPI Mode 3. In addition, the SO pin will be in a high-impedance
state, and a high-to-low transition on the CS
pin will be required to start a valid instruc-
tion. The SPI mode will be automatically selected on every falling edge of CS
by
sampling the inactive clock state. After power is applied and V
CC
is at the minimum
datasheet value, the system should wait 20 ms before an operational mode is started.

AT45DB161B-CI

Mfr. #:
Manufacturer:
Microchip Technology / Atmel
Description:
NOR Flash 16M bit
Lifecycle:
New from this manufacturer.
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