2
AT45DB161B
2224G–DFLSH–5/03
applications. Its 17,301,504 bits of memory are organized as 4096 pages of 528 bytes
each. In addition to the main memory, the AT45DB161B also contains two SRAM
data buffers of 528 bytes each. The buffers allow receiving of data while a page in the
main memory is being reprogrammed, as well as writing a continuous data stream.
EEPROM emulation (bit or byte alterability) is easily handled with a self-contained three
step Read-Modify-Write operation.Unlike conventional Flash memories that are
accessed randomly with multiple address lines and a parallel interface, the DataFlash
uses a SPI serial interface to sequentially access its data. DataFlash supports SPI mode
0 and mode 3. The simple serial interface facilitates hardware layout, increases system
reliability, minimizes switching noise, and reduces package size and active pin count.
The device is optimized for use in many commercial and industrial applications where
high density, low pin count, low voltage, and low power are essential. The device oper-
ates at clock frequencies up to 20 MHz with a typical active read current consumption of
4mA.
To allow for simple in-system reprogrammability, the AT45DB161B does not require
high input voltages for programming. The device operates from a single power supply,
2.5V to 3.6V or 2.7V to 3.6V, for both the program and read operations. The
AT45DB161B is enabled through the chip select pin (CS
) and accessed via a three-wire
interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock
(SCK).
All programming cycles are self-timed, and no separate erase cycle is required before
programming.
When the device is shipped from Atmel, the most significant page of the memory array
may not be erased. In other words, the contents of the last page may not be filled with
FFH.
Block Diagram
Memory Array
To provide optimal flexibility, the memory array of the AT45DB161B is divided into three
levels of granularity comprising of sectors, blocks, and pages. The Memory Architecture
Diagram illustrates the breakdown of each level and details the number of pages per
sector and block. All program operations to the DataFlash occur on a page-by-page
basis; however, the optional erase operations can be performed at the block or page
level.
FLASH MEMORY ARRAY
PAGE (528 BYTES)
BUFFER 2 (528 BYTES)BUFFER 1 (528 BYTES)
I/O INTERFACE
SCK
CS
RESET
VCC
GND
RDY/BUSY
WP
SOSI
