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STTH302S

P1-P3P4-P5
1/5
STTH302S
April 2002 - Ed: 1A
HIGH EFFICIENCY ULTRAFAST DIODE
®
The STTH302S, which is using ST’s new 200V
planar technology, is specially suited for switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
DESCRIPTION
■
Very low conduction losses
■
Negligible switching losses
■
Low forward and reverse recovery times
■
High junction temperature
FEATURES AND BENEFITS
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 200 V
I
F(AV)
Average forward current Tl = 107°C δ =0.5 3 A
I
FSM
Surge non repetitive forward current tp = 10 ms Sinusoidal 100 A
T
stg
Storage temperature range - 65 + 175 °C
Tj Maximum operating junction temperature 175 °C
ABSOLUTE RATINGS (limiting values)
I
F(AV)
3A
V
RRM
200 V
Tj (max) 175 °C
V
F
(max) 0.75 V
trr (max) 35 ns
MAIN PRODUCT CHARACTERISTICS
SMC
Symbol Parameter Maximum Unit
R
th (j-l)
Junction to lead 20 °C/W
THERMAL PARAMETERS
STTH302S
2/5
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
* Reverse leakage
current
Tj = 25°C V
R
=V
RRM
3 µA
Tj = 125°C 4 75
V
F
** Forward voltage drop Tj = 25°C I
F
= 3 A 0.95 V
Tj = 125°C I
F
= 3 A 0.66 0.75
Pulse test: * tp = 5ms, δ <2%
** tp = 380µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P=0.60xI
F(AV)
+ 0.05 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
trr Reverse recovery
time
Tj = 25°C I
F
=1 A Irr = -50 A/µs
V
R
= 30V
35 ns
tfr Forward recovery
time
Tj = 25°C I
F
=3A dI
F
/dt=50A/µs
V
FR
=1.1xV
F
max
70 ns
V
FP
Forward recovery
voltage
Tj = 25°C I
F
=3A dI
F
/dt=50A/µs 1.6 V
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH302S
3/5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
I (A)F(AV)
P (W)F(AV)
T
δ
=tp/T
tp
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
Fig. 1: Average forward power dissipation versus
average forward current.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 25 50 75 100 125 150 175
T (°C)amb
R
th(j-a)
=R
th(j-l)
R
th(j-a)
=75°C/W
S=1cm²
I (A)F(AV)
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
tp(s)
T
δ
=tp/T
tp
Zth(j-a)/Rth(j-a)
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Fig. 3: Relative variation of thermal impedance
junction ambient versus pulse duration (Printed
circuit board epoxy FR4).
10
100
1 10 100 1000
V (V)R
F=1MHz
V
osc
=30mV
T
j
=25°C
C(pF)
Fig. 5: Junction capacitance versus reverse
voltage applied (typical values).
0.1
1.0
10.0
100.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
V (V)FM
T
j
=25°C
(Maximum values)
T
j
=125°C
(Maximum values)
T
j
=125°C
(Maximum values)
T
j
=125°C
(Typical values)
T
j
=125°C
(Typical values)
I (A)FM
Fig. 4: Forward voltage drop versus forward
current.
0
10
20
30
40
50
60
70
80
90
100
1 10 100 1000
dI /dt(A/µs)F
I
F
=3A
V
R
=100V
T
j
=125°C
T
j
=25°C
t (ns)RR
Fig. 6: Reverse recovery time versus dI
F
/dt (90%
confidence).
P1-P3P4-P5

STTH302S

Mfr. #:
Buy STTH302S
Manufacturer:
STMicroelectronics
Description:
Rectifiers 3.0 Amp 200 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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