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MS2341
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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DESCRIPTION:DESCRIPTION:
The MS2341 is a gold metallized silicon, NPN power transistor
designed for applications requiring high peak power and low duty
cycles such as IFF, DME, and TACAN. The MS2341 utilizes internal
impedance matching for improved broadband performance.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage 65 V
V
CES
Collector-Emitter Voltage 65 V
V
EBO
Emitter-Base Voltage 3.5 V
I
C
Device Current 2.6 A
P
DISS
Power Dissipation 87.5 W
T
J
Junction Temperature
200
ºC
T
STG
Storage Temperature
-65 to +150
ºC
Thermal DataThermal Data
R
TH(J-C)
Junction-case Thermal Resistance 2.0
°°C/W
FeaturesFeatures
• DESIGNED FOR HIGH POWER PULSED IFF, DME, AND
TACAN APPLICATIONS
• 40 W (typ.) IFF 1030–1090 MHz
• 35 W (min.) DME 1025–1150 MHz
• 25 W (typ.) TACAN 960–1215 MHz
• 960 - 1215 MHz
• GOLD METALLIZATION
• Pout = 25 W MINIMUM
• Gp = 9.0 dB
• INTERNAL INPUT MATCHING
• INFINITE VSWR CAPABILITY @ RATED CONDITIONS
• COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
