SQA401EJ
www.vishay.com
Vishay Siliconix
S17-0423-Rev. A, 27-Mar-17
1
Document Number: 75528
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 20 V (D-S) 175 °C MOSFET
Marking Code: QBXXXX
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
d
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. Parametric verification ongoing
PRODUCT SUMMARY
V
DS
(V) -20
R
DS(on)
() at V
GS
= -4.5 V 0.125
R
DS(on)
() at V
GS
= -2.5 V 0.205
I
D
(A) -3.75
Configuration Single
Package PowerPAK SC-70
PowerPAK
®
SC-70-6L Single
3
G
2
D
1
D
S
4
D
5
D
6
Bottom View
2.05 mm
2.05 mm
1
Top View
S
7
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
-20
V
Gate-source voltage V
GS
± 12
Continuous drain current
T
C
= 25 °C
I
D
-3.75
A
T
C
= 125 °C -3.75
Continuous source current (diode conduction)
a
I
S
3.75
Pulsed drain current
b
I
DM
-12
Single pulse avalanche current
L = 0.1 mH
I
AS
-8
Single pulse avalanche energy E
AS
3.2 mJ
Maximum power dissipation
b
T
C
= 25 °C
P
D
13.6
W
T
C
= 125 °C 4.5
Operating junction and storage temperature range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-ambient PCB mount
c
R
thJA
90
°C/W
Junction-to-case (drain) R
thJF
11