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RSR025P03TL

P1-P3P4-P5
RSR025P03
Transistors
Rev.A 1/4
4V Drive
Pch
MOSFET
RSR025P03
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance
2) Space saving−small surface mount package (TSMT3)
3) 4V drive
zApplications
Switching
zPackaging specifications
zInner circuit
Package
Code
Taping
Basic ordering unit (pieces)
RSR025P03
TL
3000
Type
zAbsolute maximum ratings (Ta=25°C)
∗1
∗2
∗1
Parameter
VV
DSS
Symbol
VV
GSS
AI
D
AI
DP
AI
S
AI
SP
WP
D
°CTch
°CTstg
Limits Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Continuous
Pulsed
Continuous
Pulsed
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Source current
(Body diode)
−30
±2.5
±10
±20
−0.8
−10
1
150
−55 to +150
zThermal resistance
Parameter
°C/WRth(ch-a)
Symbol Limits Unit
Channel to ambient
125
∗ Mounted on a ceramic board
∗
(1) Gate
(2) Source
(3) Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2
∗1
(3)
(1)
(2)
Each lead has same dimensions
(1) Gate
(2) Source
(3) Drain
TSMT3
0
~
0.1
0.16
0.85
1.0MAX
0.7
0.3
~
0.6
(
2
)
(
1
)
(
3
)
2.9
2.8
1.9
1.6
0.950.95
0.4
Abbreviated symbol : WY
RSR025P03
Transistors
Rev.A 2/4
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
Y
fs
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
∗
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Min.
−−±10 µAV
GS
=±20V, V
DS
=0V
V
DD
−15V
Typ. Max.
Unit
Conditions
−30 −−VI
D
= −1mA, V
GS
=0V
−−−1 µAV
DS
= −30V, V
GS
=0V
−1.0 −−2.5 V V
DS
= −10V, I
D
= −1mA
− 70 98 I
D
= −2.5A, V
GS
= −10V
− 100 140 mΩ
mΩ
mΩ
I
D
= −1.2A, V
GS
= −4.5V
− 115 160 I
D
= −1.2A, V
GS
= −4V
1.6 −−SV
DS
= −10V, I
D
= −1.2A
− 460 − pF V
DS
= −10V
− 105
65
− pF V
GS
=0V
−
10
− pF f=1MHz
−
10
− ns
−
42
− ns
−
10
− ns
−
5.4
− ns
−
1.4
nC
−
1.6
−
−
nC
V
GS
= −5V
−−nC
I
D
= −2.5A
VDD −15V
I
D
= −1.2A
V
GS
= −10V
R
L
=12.5Ω
R
GS
=10Ω
R
L
=6Ω
R
G
=10Ω
zBody diode characteristics (Source-drain) (Ta=25°C)
V
SD
−−Forward voltage
Parameter Symbol
Min. Typ.
−1.2 V I
S
= −0.8A, V
GS
=0V
Max.
Unit
Conditions
RSR025P03
Transistors
Rev.A 3/4
zElectrical characteristic circuits
Fig.1 Typical Transfer Characteristics Fig.2 Typical Transfer Characteristics Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.4 Static Drain-Source On-State Resistance Fig.5 Static Drain-Source On-State Fig.6 Static Drain-Source On-State
vs. Gate-Source Voltage Resistance vs. Drain Current Resistance vs. Drain Current
Fig.7 Static Drain-Source On-State Fig.8 Typical Capacitance Fig.9 Switching Characteristics
Resistance vs. Drain Current vs. Drain-Source Voltage
10
100
1000
0.01 0.1 1 10 100
Drain-Source Voltage : -VDS [V]
Capacitance : C [pF]
Ta=25
℃
f=1MHz
VGS=0V
Ciss
Coss
Crss
0.001
0.01
0.1
1
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gte-Source Voltage : -VGS [V]
Drain Current : -ID [A]
VDS=-10V
pulsed
Ta=125
℃
　　　
75
℃
　　　
25
℃
　　
-25
℃
1
10
100
1000
10000
0.01 0.1 1 10
Drain Current : -ID [A]
Switching Time : t [ns]
td(on)
tr
tf
td(off)
0.001
0.01
0.1
1
10
1.01.52.02.53.03.54.0
Gate-Source Voltage : -VGS [V]
Drain Current : -ID [A]
Ta=25
℃
VDS=-10V
pulsed
10
100
1000
0.01 0.1 1 10
Drain Current : -ID [A]
Static Drain-Source On-State
Resistance : RDS(on) [mΩ]
Ta=25
℃
pulsed
VGS= - 4.0V
- 4.5V
- 10V
0
100
200
300
400
500
0 5 10 15 20
Gate-Source Voltage
　
:-VGS [V]
Static Drain-Source On-State Resistance
: RDS(on) [mΩ]
Ta=25
℃
pulsed
ID=-2.5A
ID=-1.2A
10
100
1000
0.1 1 10
Drain Current : -ID [A]
Static Drain-Source On-State
Resistance : RDS(on) [mΩ]
VGS=-10V
pulsed
Ta=125
℃
75
℃
25
℃
-25
℃
10
100
1000
0.1 1 10
Drain Current : -ID [A]
Static Drain-Source On-State
Resistance : RDS(on) [mΩ]
VGS=-4.5V
pulsed
Ta=125
℃
75
℃
25
℃
-25
℃
10
100
1000
0.1 1 10
Drain Current : -ID [A]
Static Drain-Source On-State
Resistance : RDS(on) [mΩ]
VGS=-4V
pulsed
Ta=125
℃
75
℃
25
℃
-25
℃
Ta=25
℃
V
DD
=-15V
V
GS
=-10V
R
G
=10Ω
Pulsed
P1-P3P4-P5

RSR025P03TL

Mfr. #:
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Description:
MOSFET P-CH 30V 2.5A TSMT3
Lifecycle:
New from this manufacturer.
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