MID550-12A4

© 2000 IXYS All rights reserved
1 - 4
Symbol Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 1200 V
V
CGR
T
J
= 25°C to 150°C; R
GE
= 20 kW 1200 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C 670 A
I
C80
T
C
= 80°C 460 A
I
CM
T
C
= 80°C, t
p
= 1 ms
920 A
t
SC
V
GE
= ±15 V, V
CE
= V
CES
, T
J
= 125°C10ms
(SCSOA) R
G
= 1.8 W, non repetitive
RBSOA V
GE
= ±15 V, T
J
= 125°C, R
G
= 1.8 W I
CM
= 800 A
Clamped inductive load, L = 100 mHV
CEK
< V
CES
P
tot IGBT
T
C
= 25°C 2750 W
T
J
150 °C
T
stg
-40 ... +150 °C
V
ISOL
50/60 Hz, RMS t = 1 min 4000 V~
I
ISOL
£ 1 mA t = 1 s 4800 V~
Insulating material: Al
2
O
3
M
d
Mounting torque (module) 2.25-2.75 Nm
20-25 lb.in.
(teminals) 2.5-3.7 Nm
22-33 lb.in.
d
S
Creepage distance on surface 14 mm
d
A
Strike distance through air 9.6 mm
a Max. allowable acceleration 50 m/s
2
Weight Typical 250 g
8.8 oz.
Data according to a single IGBT/FRED unless otherwise stated.
I
C25
= 670 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.3 V
Features
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
package with DCB ceramic base plate
isolation voltage 4800 V
UL registered E72873
Advantages
space and weight savings
reduced protection circuits
Typical Applications
AC and DC motor control
power supplies
welding inverters
Short Circuit SOA Capability
Square RBSOA
MID 550-12 A4
MDI 550-12 A4
8
9
1
2
3
11
10
E 72873
2
1
3
10
11
MID
2
1
3
9
8
MDI
IGBT Modules
Additional current limitation by external leads
030
© 2000 IXYS All rights reserved
2 - 4
Symbol Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
(BR)CES
V
GE
= 0 V 1200 V
V
GE(th)
I
C
= 16 mA, V
CE
= V
GE
4.5 6.5 V
I
CES
V
CE
= V
CES
T
J
= 25°C21mA
T
J
= 125°C30mA
I
GES
V
CE
= 0 V, V
GE
= ±20 V 1.6 µA
V
CE(sat)
I
C
= 400 A, V
GE
= 15 V 2.3 2.8 V
C
ies
26 nF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 4 nF
C
res
2nF
t
d(on)
100 ns
t
r
60 ns
t
d(off)
600 ns
t
f
90 ns
E
on
64 mJ
E
off
59 mJ
R
thJC
0.05 K/W
R
thJS
with heatsink compound 0.09 K/W
Free Wheeling Diode (FRED) Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
F
I
F
= 400 A, V
GE
= 0 V 2.4 2.6 V
I
F
= 400 A, V
GE
= 0 V, T
J
= 125°C 1.9 2.0 V
I
F
T
C
= 25°C
750 A
T
C
= 80°C 460 A
I
RM
I
F
= 400 A, V
GE
= 0 V, -di
F
/dt = 3000 A/ms 300 A
t
rr
T
J
= 125°C, V
R
= 600 V 200 ns
R
thJC
0.09 K/W
R
thJS
0.18 K/W
Anti Parallel Diode (FRED) Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
F
I
F
= 100 A, V
GE
= 0 V 2.4 2.6 V
I
F
= 100 A, V
GE
= 0 V, T
J
= 125°C 1.9 2.0 V
I
F
T
C
= 25°C 150 A
T
C
= 80°C95A
I
RM
I
F
= 100 A, V
GE
= 0 V, -di
F
/dt = 600 A/ms62A
t
rr
T
J
= 125°C, V
R
= 600 V 200 ns
R
thJC
0.45 K/W
R
thJS
0.9 K/W
Inductive load, T
J
= 125°C
I
C
= 400 A, V
GE
= ±15 V
V
CE
= 600 V, R
G
= 1.8 W
MID 550-12 A4
MDI 550-12 A4
Dimensions in mm (1 mm = 0.0394")
Additional current limitation by external leads
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 1.3 V; R
0
= 3.2 mW
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.3 V; R
0
= 1.5 mW
Thermal Response
IGBT (typ.)
C
th1
= 0.90 J/K; R
th1
= 0.049 K/W
C
th2
= 2.07 J/K; R
th2
= 0.001 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.71 J/K; R
th1
= 0.090 K/W
C
th2
= 1.30 J/K; R
th2
= 0.002 K/W
© 2000 IXYS All rights reserved
3 - 4
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0
40
80
120
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100
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01234
0
200
400
600
800
1000
1200
1400
1600
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
100
200
300
400
500
600
700
800
900
0 500 1000 1500 2000
0
5
10
15
20
0.00.51.01.52.02.53.03.5
0
100
200
300
400
500
600
700
800
900
13V
11V
T
J
= 25°C
V
GE
=17V
T
J
= 125°C
V
CE
= 600V
I
C
= 400A
15V
567891011
0
100
200
300
400
500
600
700
800
13V
11V
V
GE
=17V
15V
V
CE
= 20V
T
J
= 25°C
T
J
= 25°C
T
J
= 125°C
9V
9V
V
CE
V
A
I
C
V
CE
A
I
C
V
V
V
V
GE
V
F
A
I
C
A
I
F
nC
Q
G
-di/dt
V
V
GE
A
I
RM
t
rr
ns
A/ s
550-12
T
J
= 125°C
V
R
= 600V
I
F
= 400A
I
RM
t
rr
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
free wheeling diode
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
MID 550-12 A4
MDI 550-12 A4

MID550-12A4

Mfr. #:
Manufacturer:
Littelfuse
Description:
IGBT Modules 550 Amps 1200V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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