AT93C46/56/57/66
4
Note: 1. This parameter is characterized and is not 100% tested.
AC Characteristics
Applicable over recommended operating range from T
A
= -40°C to + 85°C, V
CC
= As Specified,
CL = 1 TTL Gate and 100 pF (unless otherwise noted).
Symbol Parameter Test Condition Min Typ Max Units
f
SK
SK Clock
Frequency
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
0
0
0
0
2
1
0.5
0.25
MHz
t
SKH
SK High Time
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
SKL
SK Low Time
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
CS
Minimum CS
Low Time
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
CSS
CS Setup Time Relative to SK
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
50
50
100
200
ns
t
DIS
DI Setup Time Relative to SK
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
100
100
200
400
ns
t
CSH
CS Hold Time Relative to SK 0 ns
t
DIH
DI Hold Time Relative to SK
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
100
100
200
400
ns
t
PD1
Output Delay to 1 AC Test
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
PD0
Output Delay to 0 AC Test
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
SV
CS to Status Valid AC Test
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
DF
CS to DO in High
Impedance
AC Test
CS = V
IL
4.5V V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
100
100
200
400
ns
t
WP
Write Cycle Time
0.1 10 ms
4.5V
V
CC
5.5V 1 ms
Endurance
(1)
5.0V, 25°C, Page Mode 1M Write Cycles
AT93C46/56/57/66
5
Instruction Set for the AT93C46
Instruction SB
Op
Code
Address Data
Commentsx 8 x 16 x 8 x 16
READ 1 10 A
6
- A
0
A
5
- A
0
Reads data stored in memory, at
specified address.
EWEN 1 00 11XXXXX 11XXXX Write enable must precede all
programming modes.
ERASE 1 11 A
6
- A
0
A
5
- A
0
Erase memory location A
n
- A
0
.
WRITE 1 01 A
6
- A
0
A
5
- A
0
D
7
- D
0
D
15
- D
0
Writes memory location A
n
-
A
0
.
ERAL 1 00 10XXXXX 10XXXX Erases all memory locations. Valid
only at V
CC
= 4.5V to 5.5V.
WRAL 1 00 01XXXXX 01XXXX D
7
- D
0
D
15
- D
0
Writes all memory locations. Valid
only at V
CC
= 4.5V to 5.5V.
EWDS 1 00 00XXXXX 00XXXX Disables all programming instructions.
Instruction Set for the AT93C57
Instruction SB
Op
Code
Address Data
Commentsx 8 x 16 x 8 x 16
READ 1 10 A
7
- A
0
A
6
- A
0
Reads data stored in memory, at
specified address.
EWEN 1 00 11XXXXXX 11XXXXX Write enable must precede all
programming modes.
ERASE 1 11 A
7
- A
0
A
6
- A
0
Erase memory location A
n
-
A
0
.
WRITE 1 01 A
7
- A
0
A
6
- A
0
D
7
- D
0
D
15
- D
0
Writes memory location A
n
- A
0
.
ERAL 1 00 10XXXXXX 10XXXXX Erases all memory locations. Valid
only at V
CC
= 4.5V to 5.5V.
WRAL 1 00 01XXXXXX 01XXXXX D
7
- D
0
D
15
- D
0
Writes all memory locations. Valid
only at V
CC
= 4.5V to 5.5V.
EWDS 1 00 00XXXXXX 00XXXXX Disables all programming instructions.
AT93C46/56/57/66
6
Functional Description
The AT93C46/56/57/66 is accessed via a simple and ver-
satile 3-wire serial communication interface. Device opera-
tion is controlled by seven instructions issued by the host
processor. A valid instruction starts with a rising edge
of CS and consists of a Start Bit (logic 1) followed by the
appropriate Op Code and the desired memory Address
location.
READ (READ): The Read (READ) instruction contains
the Address code for the memory location to be read. After
the instruction and address are decoded, data from the
selected memory location is available at the serial output
pin DO. Output data changes are synchronized with the ris-
ing edges of serial clock SK. It should be noted that a
dummy bit (logic 0) precedes the 8- or 16-bit data output
string.
ERASE/WRITE (EWEN): To assure data integrity, the
part automatically goes into the Erase/Write Disable
(EWDS) state when power is first applied. An Erase/Write
Enable (EWEN) instruction must be executed first before
any programming instructions can be carried out. Please
note that once in the Erase/Write Enable state, program-
ming remains enabled until an Erase/Write Disable
(EWDS) instruction is executed or V
CC
power is removed
from the part.
ERASE (ERASE): The Erase (ERASE) instruction pro-
grams all bits in the specified memory location to the logical
1 state. The self-timed erase cycle starts once the
ERASE instruction and address are decoded. The DO pin
outputs the READY/BUSY status of the part if CS is
brought high after being kept low for a minimum of 250 ns
(t
CS
). A logic 1 at pin DO indicates that the selected mem-
ory location has been erased, and the part is ready for
another instruction.
WRITE (WRITE): The Write (WRITE) instruction contains
the 8 or 16 bits of data to be written into the specified mem-
ory location. The self-timed programming cycle, t
WP
, starts
after the last bit of data is received at serial data input pin
DI. The DO pin outputs the READY/BUSY status of the part
if CS is brought high after being kept low for a minimum of
250 ns (t
CS
). A logic 0 at DO indicates that programming
is still in progress. A logic 1 indicates that the memory
location at the specified address has been written with the
data pattern contained in the instruction and the part is
ready for further instructions. A READY/BUSY status can-
not be obtained if the CS is brought high after the end
of the self-timed programming cycle, t
WP
.
ERASE ALL (ERAL): The Erase All (ERAL) instruction
programs every bit in the memory array to the logic 1
state and is primarily used for testing purposes. The DO pin
outputs the READY/BUSY status of the part if CS is
brought high after being kept low for a minimum of 250 ns
(t
CS
). The ERAL instruction is valid only at V
CC
= 5.0V ±
10%.
WRITE ALL (WRAL): The Write All (WRAL) instruction
programs all memory locations with the data patterns spec-
ified in the instruction. The DO pin outputs the
READY/BUSY status of the part if CS is brought high after
being kept low for a minimum of 250 ns (t
CS
). The WRAL
instruction is valid only at V
CC
= 5.0V ± 10%.
ERASE/WRITE DISABLE (EWDS): To protect against
accidental data disturb, the Erase/Write Disable (EWDS)
instruction disables all programming modes and should be
executed after all programming operations. The operation
of the READ instruction is independent of both the EWEN
and EWDS instructions and can be executed at any time.
Instruction Set for the AT93C56 and AT93C66
Instruction SB
Op
Code
Address Data
Commentsx 8 x 16 x 8 x 16
READ 1 10 A
8
- A
0
A
7
- A
0
Reads data stored in memory, at
specified address.
EWEN 1 00 11XXXXXXX 11XXXXXX Write enable must precede all
programming modes.
ERASE 1 11 A
8
- A
0
A
7 -
A
0
Erases memory location A
n
- A
0
.
WRITE 1 01 A
8
- A
0
A
7
- A
0
D
7
- D
0
D
15
- D
0
Writes memory location A
n
- A
0
.
ERAL 1 00 10XXXXXXX 10XXXXXX Erases all memory locations. Valid
only at V
CC
= 4.5V to 5.5V.
WRAL 1 00 01XXXXXXX 01XXXXXX D
7
- D
0
D
15
- D
0
Writes all memory locations. Valid
when V
CC
= 5.0V ± 10% and Disable
Register cleared.
EWDS 1 00 00XXXXXXX 00XXXXXX Disables all programming instructions.

AT93C66-10SI-2.5

Mfr. #:
Manufacturer:
Description:
IC EEPROM 4K SPI 2MHZ 8SOIC
Lifecycle:
New from this manufacturer.
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