STPS10L40CT Datasheet STPS10L40CG-TR, STPS10L40CT | P1-P3

April 2016

DocID9433 Rev 7

1/12

This is information on a product in full production.

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STPS10L40C

Low drop power Schottky rectifier

Datasheet - production data

Features

 Low forward voltage drop meaning very

small conduction losses

 Low dynamic losses as a result of the

schottky barrier

 Avalanche capability specified

 ECOPACK

®

2 compliant component for

D²PAK on demand

Description

Dual center tap Schottky rectifier suited for switch

mode power supply and high frequency DC to

DC converters.

Packaged either in TO-220AB and D

2

PAK, this

device is especially intended for use in low

voltage, high frequency inverters, free wheeling

and polarity protection applications.

Table 1: Device summary

Symbol

Value

I

F(AV)

2 x 5 A

V

RRM

40 V

T

j

(max.)

150 °C

V

F

(typ.)

0.36 V

K

A1

A2

D

2

PAK

A1

K

A2

A1

K

A2

TO-220AB

K

Characteristics

STPS10L40C

2/12

DocID9433 Rev 7

1 Characteristics

Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

V

RRM

Repetitive peak reverse voltage

40

V

I

F(RMS)

Forward rms current

20

A

I

F(AV)

Average forward current δ = 0.5,

square wave

T

C

= 140 °C

Per diode

5

A

Per device

10

I

FSM

Surge non repetitive forward current

t

p

= 10 ms sinusoidal

150

A

P

ARM

Repetitive peak avalanche power

t

p

= 10 µs, T

j

= 125 °C

190

W

T

stg

Storage temperature range

-65 to +150

°C

T

j

Maximum operating junction temperature

(1)

+150

°C

Notes:

(1)

(dP

tot

/dT

j

) < (1/R

th(j-a)

) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Value

Unit

R

th(j-c)

Junction to case

Per diode

3.0

°C/W

Total

1.7

R

th(c)

Coupling

-

0.35

°C/W

When the diodes 1 and 2 are used simultaneously:

ΔT

j (diode1)

= P

(diode1)

x R

th(j-c)

(per diode) + P

(diode2)

x R

th(c)

Table 4: Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

R

(1)

Reverse leakage current

T

j

= 25 °C

V

R

= V

RRM

-

0.2

mA

T

j

= 100 °C

-

8

25

mA

V

F

(1)

Forward voltage drop

T

j

= 25 °C

I

F

= 5 A

-

0.53

V

T

j

= 100 °C

I

F

= 5 A

-

0.36

0.46

T

j

= 25 °C

I

F

= 10 A

-

0.67

T

j

= 125 °C

I

F

= 10 A

-

0.49

0.59

Notes:

(1)

Pulse test: t

p

= 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.33 x I

F(AV)

+ 0.026 I

F

2

(RMS)

STPS10L40C

Characteristics

DocID9433 Rev 7

3/12

1.1 Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current (per diode)

Figure 2: Average forward current versus ambient

temperature (δ = 0.5, per diode)

Figure 3: Normalized avalanche power derating

versus pulse duration (Tj = 125 °C)

Figure 4: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 5: Reverse leakage current versus reverse

voltage applied (typical values, per diode)

Figure 6: Junction capacitance versus reverse

voltage applied (typical values, per diode)

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

T

= tp/T

tp

= 0.05

= 0.5

=1

= 0.2

= 0.1

P

F(AV)

(W)

I

F(AV)

(A)

δ

0 25 50 75 100 125 150

0

1

2

3

4

5

6

T

= tp/T

tp

δ

T

amb

(°C)

I

F(AV)

(A)

R

th(j-a)

= R

th(j-c)

R

th(j-a)

= 15 °C/W

P (t

p

)

P (10 µs)

ARM

0.001

0.01

0.1

1

1 10 100 1000

t (µs)

p

1E-3 1E-2 1E-1 1E+0

0.0

0.2

0.4

0.6

0.8

1.0

T

= tp/T

tp

t (s)

p

= 0.5

= 0.2

= 0.1

Z

th(j-c)

/R

th(j-c)

single pulse

δ

0 5 10 15 20 25 30 35 40

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

I

R

(mA)

V

R

(V)

T

j

= 150 °C

T

j

= 100 °C

T

j

= 25 °C

10

100

1000

C(pF)

V

R

(V)

F = 1 MHz

V

OSC

= 30 mV

RMS

T

j

= 25 °C

1 2 5 10 20 50

STPS10L40CT

STPS10L40CT

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